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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 LD纵向泵浦Tm3+:GdVO4激光器研究 学位论文 2011, 2010 林佳丽 收藏  |  浏览/下载：4/0  |  提交时间：2016/02/14 Tm3+:GdVO4激光器  泵浦吸收饱和效应  速率方程  谐振腔  光谱  Tm3+:GdVO4 solid-state Laser  Pump absorption saturation effect  Rate-equation  Resonator  Absorption spectrum   Tm3+:GdVO4固体激光器的理论与实验研究 学位论文 2011, 2011 廖雄勇 收藏  |  浏览/下载：3/0  |  提交时间：2016/02/14 Tm3+:GdVO4  准三能级速率方程  泵浦吸收饱和效应  Judd-Ofelt理论  Tm3+:GdVO4  Quasi-three-level rate equations  Pump absorption saturation effect  Judd-Ofelt theory   Impact of pump saturation and SRS between channels on B-DFRA gain spectrum 期刊论文 2010, 2010 Huo Yi-jie; Zhang Wei; Peng Jiang-de; Liu Xiao-ming 收藏  |  浏览/下载：3/0 Evaluation of optical properties of self-frequency-doubling crystal Yb:GdYAl/sub 3/(BO/sub 3/)/sub 4/ for laser applications 期刊论文 2010, 2010 Li Jing; Li Qiang; Wang Ji-Yang; Zhao Hong-Yang 收藏  |  浏览/下载：3/0 The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China He C.-F.; Qin L.; Li J.; Cheng L.-W.; Liang X.-M.; Ning Y.-Q.; Wang L.-J. 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.   The generation of high efficiency and high quality and high stability parametric amplified light 期刊论文 acta physica sinica, 2004, 卷号: 53, 期号: 1, 页码: 105-113 作者:  Liu, HJ;  Chen, GF;  Zhao, W;  Wang, YS 收藏  |  浏览/下载：11/0  |  提交时间：2015/11/12 optical parametric amplification  gain saturation  pump depletion  stability