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清华大学 [2]
厦门大学 [2]
长春光学精密机械与物... [1]
西安光学精密机械研究... [1]
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期刊论文 [3]
学位论文 [2]
会议论文 [1]
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2011 [2]
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LD纵向泵浦Tm3+:GdVO4激光器研究
学位论文
2011, 2010
林佳丽
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浏览/下载:4/0
  |  
提交时间:2016/02/14
Tm3+:GdVO4激光器
泵浦吸收饱和效应
速率方程
谐振腔
光谱
Tm3+:GdVO4 solid-state Laser
Pump absorption saturation effect
Rate-equation
Resonator
Absorption spectrum
Tm3+:GdVO4固体激光器的理论与实验研究
学位论文
2011, 2011
廖雄勇
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浏览/下载:3/0
  |  
提交时间:2016/02/14
Tm3+:GdVO4
准三能级速率方程
泵浦吸收饱和效应
Judd-Ofelt理论
Tm3+:GdVO4
Quasi-three-level rate equations
Pump absorption saturation effect
Judd-Ofelt theory
Impact of pump saturation and SRS between channels on B-DFRA gain spectrum
期刊论文
2010, 2010
Huo Yi-jie
;
Zhang Wei
;
Peng Jiang-de
;
Liu Xiao-ming
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浏览/下载:3/0
Evaluation of optical properties of self-frequency-doubling crystal Yb:GdYAl/sub 3/(BO/sub 3/)/sub 4/ for laser applications
期刊论文
2010, 2010
Li Jing
;
Li Qiang
;
Wang Ji-Yang
;
Zhao Hong-Yang
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浏览/下载:3/0
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE)
会议论文
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
He C.-F.
;
Qin L.
;
Li J.
;
Cheng L.-W.
;
Liang X.-M.
;
Ning Y.-Q.
;
Wang L.-J.
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浏览/下载:22/0
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提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser
and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power
the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime
so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells
and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger
the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs
This three QWs structure can add the quantum state of QW
increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
The generation of high efficiency and high quality and high stability parametric amplified light
期刊论文
acta physica sinica, 2004, 卷号: 53, 期号: 1, 页码: 105-113
作者:
Liu, HJ
;
Chen, GF
;
Zhao, W
;
Wang, YS
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浏览/下载:11/0
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提交时间:2015/11/12
optical parametric amplification
gain saturation
pump depletion
stability
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