CORC

在结果中检索

CORC

浏览/检索结果: 共13条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Improving Luminous Efficacy of Ceramic Resonator Plasma Lamps by Using Microwave Pulse Modulation 期刊论文
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2022
作者:  Jia, Hua;  Xu, Mengyao;  Huan, Weiding;  Shan, Jiafang;  Liu, Fukun
收藏  |  浏览/下载：194/0  |  提交时间：2022/12/23
侧壁粗化提高GaN基发光二极管出光效率的研究 期刊论文
2015
李晓莹; 朱丽虹; 邓彪; 张玲; 刘维翠; 曾凡明; 刘宝林
收藏  |  浏览/下载：3/0  |  提交时间：2016/05/17
GaN-based blue LEDs with microstructure on p-GaN surface formed by inductively coupled plasma etching 期刊论文
2010, 2010
Zhang Xian-peng; Han Yan-jun; Luo Yi; Xue Xiao-lin; Wang Lai; Jiang Yang
收藏  |  浏览/下载：3/0
Design of Si-based vertical cavity surface light emitter 期刊论文
2010, 2010
Yao Yongzhao; Yue Ruifeng; Liu Litian
收藏  |  浏览/下载：4/0
Design of Si-based vertical cavity surface light emitter 期刊论文
2010, 2010
Yao Yongzhao; Yue Ruifeng; Liu Litian
收藏  |  浏览/下载：3/0
Photo/electroluminescence properties of an europium (III) complex doped in 4,4 '-N,N '-dicarbazole-biphenyl matrix 期刊论文
thin solid films, 2010, 卷号: 518, 期号: 15, 页码: 4403-4407
Zhou YH; Zhou L; Wu J; Li HY; Zheng YX; You XZ; Zhang HJ
收藏  |  浏览/下载：14/0  |  提交时间：2012/06/06
Improvement of the performance of gan-based leds grown on sapphire substrates patterned by wet and icp etching 期刊论文
Solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967
作者:  Gao, Haiyong;  Yan, Fawang;  Zhang, Yang;  Li, Jinmin;  Zeng, Yiping
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967
Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH
收藏  |  浏览/下载：58/4  |  提交时间：2010/03/08
LCDs, LEDs, And OLEDs Project A Bright Future. 期刊论文
Electronic design, 2008, 卷号: Vol.56 No.1, 页码: 2-4
作者:  Allan,Roger
收藏  |  浏览/下载：4/0  |  提交时间：2020/01/13
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.  

©版权所有 ©2017 CSpace - Powered by CSpace