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	GAN-Based Key Secret-Sharing Scheme in Blockchain 期刊论文 IEEE TRANSACTIONS ON CYBERNETICS, 2021, 卷号: 51, 期号: 1, 页码: 393-404 作者: Zheng, Wenbo; Wang, Kunfeng; Wang, Fei-Yue 收藏 \| 浏览/下载：46/0 \| 提交时间：2021/03/01 DNA Gallium nitride Blockchain Cryptography Generative adversarial networks Encoding Training Classification generative adversarial network (GAN) image segmentation secret sharing
	Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48 作者: Guo, Wei; Xu, Houqiang; Chen, Li; Yu, Huabin; Jiang, Jie'an 收藏 \| 浏览/下载：130/0 \| 提交时间：2020/12/16 INVERSION DOMAIN BOUNDARIES MOLECULAR-BEAM EPITAXY C-GAN DOMAINS GALLIUM NITRIDE N-POLARITY 2ND-HARMONIC GENERATION SURFACE-MORPHOLOGY GAAS FILMS GROWTH ALN
	Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure 期刊论文 ELECTRONICS, 2019, 卷号: 8 作者: Huang, Huolin; Li, Feiyu; Sun, Zhonghao; Sun, Nan; Zhang, Feng 收藏 \| 浏览/下载：26/0 \| 提交时间：2019/12/02 vertical field-effect transistor (VFET) back current blocking layer (BCBL) gallium nitride (GaN) normally off power devices
	Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文 IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242 作者: Hongliang Zhao; Lin-An Yang; Hao Zou; Xiao-hua Ma; Yue Hao 收藏 \| 浏览/下载：35/0 \| 提交时间：2019/12/17 HEMTs Wide band gap semiconductors Aluminum gallium nitride Logic gates Oscillators Mathematical model Schottky diodes AlGaN/GaN electron domain high-electron mobility transistor (HEMT) recessed barrier layer (RBL) terahertz
	Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments. 期刊论文 Materials (Basel, Switzerland), 2019, 卷号: 12, 期号: 17 作者: Guo, Jian; Qiu, Changjun; Zhu, Huiling; Wang, Yongqiang* 收藏 \| 浏览/下载：13/0 \| 提交时间：2019/12/27 frictional coefficient gallium nitride (GaN) nanoscratch nanotribological properties wear resistance
	Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文 Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440 作者: S.W.H.Chen; H.Y.Wang; C.Hu; Y.Chen; H.Wang 收藏 \| 浏览/下载：2/0 \| 提交时间：2020/08/24 Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry
	Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications 期刊论文 ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900 作者: Zhu, Tianhua; Zhuo, Fang 收藏 \| 浏览/下载：16/0 \| 提交时间：2019/11/19 high-current applications wire bonding power density avalanche-suppressed method gallium compounds GaN integral package lead bonding single gate driver field effect transistor switches MOSFET DHEMT integrated cascode switch high electron mobility transistors paralleled depletion-mode high-electron-mobility transistors wide band gap semiconductors cascode transistors silicon-MOSFET Si potential unbalanced current sharing cost reduction optimised symmetric configuration high-current cascode gallium nitride switch III-V semiconductors semiconductor device packaging
	Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices 期刊论文 MICROMACHINES, 2018, 卷号: 9 作者: Huang, Huolin; Li, Feiyu; Sun, Zhonghao; Cao, Yaqing 收藏 \| 浏览/下载：7/0 \| 提交时间：2019/12/02 threshold voltage (V-th) stability gallium nitride (GaN) high electron mobility transistors (HEMTs) analytical model high-temperature operation
	Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 卷号: 51 作者: Huang, Huolin; Sun, Zhonghao; Cao, Yaqing; Li, Feiyu; Zhang, Feng 收藏 \| 浏览/下载：5/0 \| 提交时间：2019/12/02 gallium nitride (GaN) semiconductor devices surface donor-like traps current collapse
	A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices 期刊论文 IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 卷号: 33, 页码: 6199-6210 作者: Wang, Kangping; Yang, Xu; Li, Hongchang; Wang, Laili; Jain, Praveen 收藏 \| 浏览/下载：8/0 \| 提交时间：2019/11/26 Current measurement double pulse test circuit gallium nitride (GaN) high bandwidth parasitic inductance

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