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Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3(110) multilayered films
期刊论文
Journal of Applied Physics, 2020, 卷号: 128, 期号: 18
作者:
Geng, W.R.
;
Tang, Y.L.
;
Zhu, Y.L.
;
Wang, Y.J.
;
Ma, X.L.
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浏览/下载:28/0
  |  
提交时间:2020/12/18
Bismuth compounds
Boundary conditions
Domain walls
Ferroelectric films
Ferroelectricity
Gadolinium compounds
High resolution transmission electron microscopy
Nanotechnology
Terbium compounds
Topology
Vortex flowAberration-corrected
Different boundary condition
High density memory
Mechanical boundaries
Multi-layered films
Orthorhombic structures
Topological structure
Transmission electron microscopy observation
Flexoelectricity-induced retention failure in ferroelectric films
会议论文
作者:
Zou, M.J.
;
Tang, Y.L.
;
Zhu, Y.L.
;
Wang, Y.J.
;
Feng, Y.P.
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  |  
浏览/下载:8/0
  |  
提交时间:2020/12/18
Atoms
Ferroelectricity
High resolution transmission electron microscopy
Polarization
Scanning electron microscopy
StrainAntiphase domains
Experimental evidence
Ferroelectric domains
Ferroelectric memory
Piezoelectric force microscopy
Reciprocal space mapping
Retention properties
Scanning transmission electron microscopy
Flexoelectricity-induced retention failure in ferroelectric films
期刊论文
Acta Materialia, 2020, 卷号: 196, 页码: 61-68
作者:
Zou, M.J.
;
Tang, Y.L.
;
Zhu, Y.L.
;
Wang, Y.J.
;
Feng, Y.P.
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  |  
浏览/下载:23/0
  |  
提交时间:2020/11/14
Atoms
Ferroelectricity
High resolution transmission electron microscopy
Polarization
Scanning electron microscopy
Strain
Antiphase domains
Experimental evidence
Ferroelectric domains
Ferroelectric memory
Piezoelectric force microscopy
Reciprocal space mapping
Retention properties
Scanning transmission electron microscopy
The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures
期刊论文
IEEE DESIGN & TEST, 2020, 卷号: 37, 期号: 1, 页码: 79-99
作者:
Chen, Xiaoming
;
Sun, Xiaoyu
;
Wang, Panni
;
Datta, Suman
;
Hu, Xiaobo Sharon
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  |  
浏览/下载:17/0
  |  
提交时间:2020/12/10
Iron
Transistors
Computer architecture
Switches
Capacitance
Logic gates
Computational modeling
Ferroelectric Field Effect Transistor
FeFET
Negative Capacitance Field Effect Transistor
NCFET
Preisach model
FPGAs
content addressable memories
CAM
TCAM
compute-in-memory
analog synapse
Effects of total ionizing dose on single event effect sensitivity of FRAMs
期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7
作者:
Ji, Qinggang
;
Liu, Jie
;
Li, Dongqing
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  |  
浏览/下载:55/0
  |  
提交时间:2019/11/10
Ferroelectric random access memory
Total ionizing dose
Single event effect
TCAD simulation
Electroresistance of Pt/BaTiO3/LaNiO3 ferroelectric tunnel junctions and its dependence on BaTiO3 thickness
期刊论文
MATERIALS RESEARCH EXPRESS, 2019, 卷号: 6
作者:
Wang, Xi
;
Wu, Ming
;
Wei, Fansen
;
Zhang, Yiteng
;
Zheng, Chunyan
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/11/19
ferroelectric memory
pulsed laser deposition
ferroelectric tunnel junctions
resistive switching
Single event effects in commercial FRAM and mitigation technique using neutron-induced displacement damage
期刊论文
Microelectronics Reliability, 2019, 卷号: 92, 页码: 149-154
作者:
Wei, Jia-nan
;
Guo, Hong-xia
;
Zhang, Feng-qi
;
He, Chao-hui
;
Ju, An-an
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  |  
浏览/下载:28/0
  |  
提交时间:2019/11/19
Complementary metal oxide semiconductor process
Displacement damages
Ferroelectric random access memory
Latch-ups
Mitigation techniques
Parasitic bipolar transistors
Peripheral circuits
Single event effects
Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172
作者:
Chen, Xiaoming
;
Niemier, Michael
;
Hu, Xiaobo Sharon
;
Yin, Xunzhao
收藏
  |  
浏览/下载:75/0
  |  
提交时间:2019/04/03
Ferroelectric FET (FeFET)
logic-in-memory (LiM)
nonvolatile (NV) memory
Experimental study about single event functional interrupt of ferroelectric random access memory induced by 30-90 MeV proton
期刊论文
ACTA PHYSICA SINICA, 2018, 卷号: 67
作者:
Ju An-An
;
Guo Hong-Xia
;
Zhang Feng-Qi
;
Guo Wei-Xin
;
Ouyang Xiao-Ping
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/11/19
single event functional interrupt
ferroelectric random access memory
middle energy proton
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