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清华大学 [23]

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	Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3(110) multilayered films 期刊论文 Journal of Applied Physics, 2020, 卷号: 128, 期号: 18 作者: Geng, W.R.; Tang, Y.L.; Zhu, Y.L.; Wang, Y.J.; Ma, X.L. 收藏 \| 浏览/下载：28/0 \| 提交时间：2020/12/18 Bismuth compounds Boundary conditions Domain walls Ferroelectric films Ferroelectricity Gadolinium compounds High resolution transmission electron microscopy Nanotechnology Terbium compounds Topology Vortex flowAberration-corrected Different boundary condition High density memory Mechanical boundaries Multi-layered films Orthorhombic structures Topological structure Transmission electron microscopy observation
	Flexoelectricity-induced retention failure in ferroelectric films 会议论文作者: Zou, M.J.; Tang, Y.L.; Zhu, Y.L.; Wang, Y.J.; Feng, Y.P. 收藏 \| 浏览/下载：8/0 \| 提交时间：2020/12/18 Atoms Ferroelectricity High resolution transmission electron microscopy Polarization Scanning electron microscopy StrainAntiphase domains Experimental evidence Ferroelectric domains Ferroelectric memory Piezoelectric force microscopy Reciprocal space mapping Retention properties Scanning transmission electron microscopy
	Flexoelectricity-induced retention failure in ferroelectric films 期刊论文 Acta Materialia, 2020, 卷号: 196, 页码: 61-68 作者: Zou, M.J.; Tang, Y.L.; Zhu, Y.L.; Wang, Y.J.; Feng, Y.P. 收藏 \| 浏览/下载：23/0 \| 提交时间：2020/11/14 Atoms Ferroelectricity High resolution transmission electron microscopy Polarization Scanning electron microscopy Strain Antiphase domains Experimental evidence Ferroelectric domains Ferroelectric memory Piezoelectric force microscopy Reciprocal space mapping Retention properties Scanning transmission electron microscopy
	The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures 期刊论文 IEEE DESIGN & TEST, 2020, 卷号: 37, 期号: 1, 页码: 79-99 作者: Chen, Xiaoming; Sun, Xiaoyu; Wang, Panni; Datta, Suman; Hu, Xiaobo Sharon 收藏 \| 浏览/下载：17/0 \| 提交时间：2020/12/10 Iron Transistors Computer architecture Switches Capacitance Logic gates Computational modeling Ferroelectric Field Effect Transistor FeFET Negative Capacitance Field Effect Transistor NCFET Preisach model FPGAs content addressable memories CAM TCAM compute-in-memory analog synapse
	Effects of total ionizing dose on single event effect sensitivity of FRAMs 期刊论文 MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7 作者: Ji, Qinggang; Liu, Jie; Li, Dongqing 收藏 \| 浏览/下载：55/0 \| 提交时间：2019/11/10 Ferroelectric random access memory Total ionizing dose Single event effect TCAD simulation
	Electroresistance of Pt/BaTiO3/LaNiO3 ferroelectric tunnel junctions and its dependence on BaTiO3 thickness 期刊论文 MATERIALS RESEARCH EXPRESS, 2019, 卷号: 6 作者: Wang, Xi; Wu, Ming; Wei, Fansen; Zhang, Yiteng; Zheng, Chunyan 收藏 \| 浏览/下载：12/0 \| 提交时间：2019/11/19 ferroelectric memory pulsed laser deposition ferroelectric tunnel junctions resistive switching
	Single event effects in commercial FRAM and mitigation technique using neutron-induced displacement damage 期刊论文 Microelectronics Reliability, 2019, 卷号: 92, 页码: 149-154 作者: Wei, Jia-nan; Guo, Hong-xia; Zhang, Feng-qi; He, Chao-hui; Ju, An-an 收藏 \| 浏览/下载：28/0 \| 提交时间：2019/11/19 Complementary metal oxide semiconductor process Displacement damages Ferroelectric random access memory Latch-ups Mitigation techniques Parasitic bipolar transistors Peripheral circuits Single event effects
	Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits 期刊论文 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172 作者: Chen, Xiaoming; Niemier, Michael; Hu, Xiaobo Sharon; Yin, Xunzhao 收藏 \| 浏览/下载：75/0 \| 提交时间：2019/04/03 Ferroelectric FET (FeFET) logic-in-memory (LiM) nonvolatile (NV) memory
	Experimental study about single event functional interrupt of ferroelectric random access memory induced by 30-90 MeV proton 期刊论文 ACTA PHYSICA SINICA, 2018, 卷号: 67 作者: Ju An-An; Guo Hong-Xia; Zhang Feng-Qi; Guo Wei-Xin; Ouyang Xiao-Ping 收藏 \| 浏览/下载：18/0 \| 提交时间：2019/11/19 single event functional interrupt ferroelectric random access memory middle energy proton

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