×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [4]
物理研究所 [3]
厦门大学 [2]
上海微系统与信息技术... [1]
高能物理研究所 [1]
内容类型
期刊论文 [11]
发表日期
2011 [1]
2010 [1]
2008 [2]
2006 [2]
2005 [2]
2002 [2]
更多...
学科主题
半导体材料 [2]
Materials ... [1]
Physics [1]
半导体物理 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共11条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
作者升序
作者降序
提交时间升序
提交时间降序
题名升序
题名降序
InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by wet chemical etching
期刊论文
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2011, 卷号: 13, 期号: 9-10, 页码: 1203
Yu, NS
;
Zhu, XL
;
Peng, MZ
;
Xing, ZG
;
Zhou, JM
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/09/18
EPITAXIAL LATERAL OVERGROWTH
VAPOR-PHASE EPITAXY
GAN
MICROSCOPY
DEPOSITION
DEFECTS
SINGLE
Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD
期刊论文
JOURNAL OF MATERIALS SCIENCE, 2010, 卷号: 45, 期号: 6, 页码: 1503
Yu, NS
;
Zhu, XL
;
Peng, MZ
;
Zhou, JM
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2013/09/23
VAPOR-PHASE EPITAXY
LATERAL OVERGROWTH
THIN-FILMS
ALPHA-GAN
MICROSCOPY
GaN on Si-rich SiNx-coated sapphire at different growth stages: The surface morphologies and optical properties
期刊论文
http://dx.doi.org/10.1016/j.tsf.2007.12.132, 2008
Fang, Z. L.
;
Li, S. P.
;
Li, J. C.
;
Sun, H. Z.
;
Wang, S. J.
;
Kang, J. Y.
;
康俊勇
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2013/12/12
EPITAXIAL LATERAL OVERGROWTH
VAPOR-PHASE EPITAXY
IN-SITU
NUCLEATION LAYERS
BUFFER LAYER
NITRIDE
DENSITY
GAN/SAPPHIRE
REDUCTION
EVOLUTION
Characterization of MOCVD-grown non-stoichiometric SiNx
期刊论文
http://dx.doi.org/10.1016/j.surfcoat.2008.03.007, 2008
Fang, Zhilai
;
方志来
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2013/12/12
VAPOR-PHASE EPITAXY
NITRIDE THIN-FILMS
SILICON-NITRIDE
LATERAL OVERGROWTH
SAPPHIRE SUBSTRATE
GAN
SURFACE
DEPOSITION
LAYERS
CELLS
Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates fabricated by wet chemical etching
期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 8, 页码: 2243
Yu, NS
;
Guo, LW
;
Chen, H
;
Xing, ZG
;
Wang, J
;
Zhu, XL
;
Peng, MZ
;
Yan, JF
;
Jia, HQ
;
Zhou, JM
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/09/18
EPITAXIAL LATERAL OVERGROWTH
MOLECULAR-BEAM EPITAXY
GAN FILMS
VAPOR-DEPOSITION
PHOTOLUMINESCENCE
DEFECTS
SI(111)
SINGLE
LAYERS
Growth of high-quality thick GaN using a tungsten interlayer
期刊论文
RARE METALS, 2006, 卷号: 25, 页码: 11-14
Wang, XZ
;
Yu, GH
;
Lei, BL
;
Lin, CT
;
Wang, XL
;
Qi, M
;
Li, AZ
;
Nouet, G
;
Ruterana, P
;
Chen, J
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2012/03/24
VAPOR-PHASE EPITAXY
PENDEO-EPITAXY
LATERAL GROWTH
FILMS
SAPPHIRE
LAYERS
OVERGROWTH
Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation
期刊论文
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2005, 卷号: 29, 页码: #REF!
作者:
Chen, J
;
Wang, JF
;
Zhang, JC
;
Wang, H
;
Huang, Y
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2016/04/11
GaN
metalorganic chemical vapor deposition (MOCVD)
epitaxy lateral overgrowth
stacking faults
synchrotron radiation X-ray diffraction (XRD)
pole figure
Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation
期刊论文
high energy physics and nuclear physics-chinese edition, 2005, 卷号: 29, 期号: suppl.s, 页码: 37-39
Chen J
;
Wang JF
;
Zhang JC
;
Wang H
;
Huang Y
;
Wang YT
;
Yang H
;
Jia QJ
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/04/11
GaN
metalorganic chemical vapor deposition (MOCVD)
epitaxy lateral overgrowth
stacking faults
synchrotron radiation X-ray diffraction (XRD)
pole figure
WURTZITE GAN
LUMINESCENCE
Structural characterization of epitaxial lateral overgrown gan on patterned gan/gaas(001) substrates
期刊论文
Journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72
作者:
Shen, XM
;
Fu, Y
;
Feng, G
;
Zhang, BS
;
Feng, ZH
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
Transmission electron microscopy
X-ray diffraction
Epitaxial lateral overgrowth
Metalorganic vapor phase epitaxy
Cubic gallium nitride
Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates
期刊论文
journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72
Shen XM
;
Fu Y
;
Feng G
;
Zhang BS
;
Feng ZH
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/08/12
transmission electron microscopy
X-ray diffraction
epitaxial lateral overgrowth
metalorganic vapor phase epitaxy
cubic gallium nitride
CHEMICAL-VAPOR-DEPOSITION
CUBIC GAN
PHASE EPITAXY
REDUCTION
GROWTH
©版权所有 ©2017 CSpace - Powered by
CSpace