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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 Investigation on the surface modification of TiO2 nanohexagon arrays based photoanode with SnO2 nanoparticles for highly-efficient dye-sensitized solar cells 期刊论文 Materials Research Bulletin, 2019, 卷号: 109, 页码: 21-28 作者:  Javed, Hafiz Muhammad Asif;  Que, Wenxiu;  Yin, Xingtian;  Kong, Ling Bing;  Iqbal, Javed 收藏  |  浏览/下载：7/0  |  提交时间：2019/11/19 Anodizations  Dye adsorption  Electro-chemical anodization  Electronic transport  High electron mobility  Light-harvesting  TiO2 nanohexagon arrays  Wide band-gap material   Dielectric and thermal properties of micro/nano boron nitride co-filled EPDM composites for high-voltage insulation 期刊论文 MICRO & NANO LETTERS, 2019, 卷号: 14, 页码: 150-153 作者:  Nazir, Muhammad Tariq;  Bao Toan Phung;  Zhang, Yuanyuan;  Li, Shengtao 收藏  |  浏览/下载：34/0  |  提交时间：2019/11/19 nanocomposites  thermogravimetric analysis  BN  dielectric loss  dielectric losses  blending  EPDM composite samples  filled polymers  hot press application  high-voltage insulation  ethylene propylene diene monomer  nanoparticles  thermal analysis  broadband dielectric spectroscopy  hot pressing  wide band gap semiconductors  polymeric material  dielectric constant  thermal conductivity  dielectric properties  EPDM matrix  nanoboron nitride cofilled EPDM composites  melt-blending  electrical insulation applications  composite insulating materials  residual masses  nanocofilled contents  microcofilled contents  nanoBN particles  denser packing geometry  pyrolysis  boron compounds  thermal properties  microboron nitride cofilled EPDM composites  microBN particles  melt processing  initial degradation temperature  III-V semiconductors  permittivity   Fusing Benzo[c][1,2,5]oxadiazole Unit with Thiophene for Constructing Wide-bandgap High-performance IDT-based Polymer Solar Cell Donor Material 期刊论文 MACROMOLECULAR RAPID COMMUNICATIONS, 2018, 卷号: 39, 期号: 8 作者:  Song, Xin;  Fan, Meijie;  Zhang, Kaili;  Ding, Dakang;  Chen, Weiye 收藏  |  浏览/下载：54/0  |  提交时间：2018/09/06 Donor Material  Polymer Solar Cells  Power Conversion Efficiency  Wide Band-gap  Benzo[c][1  2  5]Oxadiazole   Immobilisation of TiO2 films on activated carbon fibres by a hydrothermal method for photocatalytic degradation of toluene 期刊论文 MICRO & NANO LETTERS, 2016, 卷号: 11, 期号: 9, 页码: 539-544 作者:  Liang, Peng;  Wei, Aifang;  Zhang, Yaqing;  Wu, Jiafeng;  Zhang, Xiwang 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/16 titanium compounds  wide band gap semiconductors  semiconductor thin  films  activated carbon  carbon fibres  composite materials  photochemistry  catalysis  crystal structure  X-ray diffraction  scanning electron microscopy  ultraviolet spectra  visible spectra  X-ray photoelectron spectra  materials preparation  titania film  immobilisation  photocatalytic toluene degradation  degradation  efficiency  volatile organic compound concentrations  impregnation-hydrothermal method  crystal structure  surface area  optical absorption properties  chemical composition  X-ray diffraction  XRD  Brunauer-Emmett-Teller analysis  scanning electron microscopy  SEM  ultraviolet-visible absorption spectroscopy  X-ray photoelectron  spectroscopy  XPS  hydrothermal temperature  illumination time  space  velocity  light intensity  pollutant  thin film  activated carbon fibre  surface  crystallinity  hydroxyl group content  composite material  regeneration  energy efficiency  reaction conditions  temperature 180  degC  time 3 h  power 32 W  C-TiO2   Study of the fabrication of ZnO-TFT (EI CONFERENCE) 会议论文 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Wang C.; Yang X. T.; Zhu H. C.; Ma X. M.; Fu G. Z.; Jing H.; Chang Y. C.; Du G. T. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 Znic Oxide (ZnO) as a shorter wavelength luminescent material concerning its outstanding properties of a wide band-gap semiconductor  it can be used as the active channel layer to fabricate thin film transistor (TFT) and transparent thin film transistor(TTFT). In this paper  we introduced ZnO-TFT using different substrate material  insulator material  electrode material of gate  source and drain in its device.