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A bistable honeycomb mechanical metamaterial with transformable Poisson's ratio and tunable vibration isolation properties
期刊论文
THIN-WALLED STRUCTURES, 2024, 卷号: 198, 页码: 8
作者:
Xiao, Boya
;
Liu, Yu
;
Xu, Wenshuai
;
Wei, Rongyao
;
Chen, Meng
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2024/05/21
Mechanical metamaterials
Transformable Poisson's ratio
Tunable bandgap
Local resonance
Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response
期刊论文
CERAMICS INTERNATIONAL, 2022, 卷号: 48, 期号: 2, 页码: 2802-2810
作者:
Chen, Jianjin
;
Shen, Longhai
;
Qi, Dongli
;
Wu, Lijun
;
Li, Xiang
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2022/01/27
Al1
xInxN films
Magnetron sputtering
Tunable bandgap
Photodetectors
Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response
期刊论文
CERAMICS INTERNATIONAL, 2022, 卷号: 48, 期号: 2, 页码: 2802-2810
作者:
Chen, Jianjin
;
Shen, Longhai
;
Qi, Dongli
;
Wu, Lijun
;
Li, Xiang
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2022/01/27
Al1
xInxN films
Magnetron sputtering
Tunable bandgap
Photodetectors
Bandgap tuning of two-dimensional materials by sphere diameter engineering
期刊论文
NATURE MATERIALS, 2020, 卷号: 19, 期号: 5, 页码: 528-+
作者:
Zeng, MQ
;
Liu, JX
;
Zhou, L
;
Mendes, RG
;
Dong, YQ
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2021/09/06
TUNABLE BANDGAP
SURFACE-ENERGY
BORON-NITRIDE
GRAPHENE
STRAIN
PIEZOELECTRICITY
TRANSITION
MONOLAYER
GROWTH
GLASS
Fringe structures and tunable bandgap width of 2D boron nitride nanosheets
期刊论文
BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2014, 卷号: 5, 页码: 1186-1192
作者:
Feng, Peter
;
Sajjad, Muhammad
;
Li, Eric Yiming
;
Zhang, Hongxin
;
Chu, Jin
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  |  
浏览/下载:14/0
  |  
提交时间:2018/03/15
boron nitride sheets
fringe patterns
functionalization
tunable bandgap width
Complete composition tunability of Cd1−xZnxTe alloy nanostructures along a single substrate
期刊论文
Materials Letters, 2013, 卷号: Vol.105, 页码: 90-94
作者:
Wang, YC
;
Xu, JY
;
Ren, PY
;
Zhuang, XJ
;
Zhou, H
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  |  
浏览/下载:9/0
  |  
提交时间:2020/01/05
Nanocrystalline materials
Alloy nanowires
Optical materials and properties
Cd1−xZnxTe
Bandgap-tunable
AN ALL-FIBER GAS SENSING SYSTEM USING HOLLOW-CORE PHOTONIC BANDGAP FIBER AS GAS CELL
期刊论文
INSTRUMENTATION SCIENCE & TECHNOLOGY, 2011, 卷号: 39, 期号: [db:dc_citation_issue], 页码: 78-87
作者:
Ding, Hui
;
Li, Xianli
;
Cui, Junhong
;
Dong, Shaofei
;
Yang, Le
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  |  
浏览/下载:3/0
  |  
提交时间:2019/12/10
hollow-core photonic bandgap fiber
tunable fiber laser
gas sensing
Optical spectroscopy of bilayer graphene
会议论文
24th International Winterschool on Electronic Properties of Novel Materials - Molecular Nanostructures (IWEPNM 2010), Tirol, AUSTRIA, MAR 06-13, 2010
作者:
Geng, BS
;
Horng, J
;
Zhang, YB
;
Tang, TT
;
Park, CH
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  |  
浏览/下载:2/0
  |  
提交时间:2015/07/31
bilayer graphene
Fano resonance
infrared spectroscopy
tunable bandgap
Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE)
会议论文
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China
Liu K.
;
Shen D.
;
Zhang J.
;
Lu Y.
;
Jiang D.
;
Zhao Y.
;
Li B.
;
Zhao D.
;
Zhang Z.
;
Yao B.
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  |  
浏览/下载:18/0
  |  
提交时间:2013/03/25
In recent years
ZnMgO semiconductor alloys
with a direct bandgap tunable between 3.37 eV and 7.8 eV
become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper
we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m
5 m and 10 m
respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current
spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch
the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore
the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns
170 ns and 230 ns for the devices with different finger pitches of 2 m
5 m and 10 m
respectively..
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