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	Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure 期刊论文 THIN SOLID FILMS, 2022, 卷号: 762 作者: Cheng, Wangping; Li, Chenhui; Zhou, Chen; He, Yuandi; Wei, Renhuai 收藏 \| 浏览/下载：23/0 \| 提交时间：2022/12/23 Resistive random access memory Resistive switching Self-rectifying behavior Copper chromium oxide Thin film Solution deposition
	Block Convolution: Toward Memory-Efficient Inference of Large-Scale CNNs on FPGA 期刊论文 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 卷号: 41, 期号: 5, 页码: 1436-1447 作者: Li, Gang; Liu, Zejian; Li, Fanrong; Cheng, Jian 收藏 \| 浏览/下载：29/0 \| 提交时间：2022/06/10 Convolution Field programmable gate arrays System-on-chip Task analysis Random access memory Tensors Memory management Block convolution convolutional neural network (CNN) accelerator field-programmable gate array (FPGA) memory efficient off-chip transfer
	Covariance-Based Joint Device Activity and Delay Detection in Asynchronous mMTC 期刊论文 IEEE SIGNAL PROCESSING LETTERS, 2022, 卷号: 29, 页码: 538-542 作者: Wang, Zhaorui; Liu, Ya-Feng; Liu, Liang 收藏 \| 浏览/下载：10/0 \| 提交时间：2022/04/02 Delays Channel estimation Signal processing algorithms Synchronization Protocols Performance evaluation Optimization Asynchronous mMTC coordinate descent joint activity and delay detection random access
	Impact of High TID Irradiation on Stability of 65 nm SRAM Cells 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050 作者: Cui, JW (Cui, Jiangwei) [1]; Zheng, QW (Zheng, Qiwen) [1]; Li, YD (Li, Yudong) [1]; Guo, Q (Guo, Qi) [1] 收藏 \| 浏览/下载：21/0 \| 提交时间：2022/06/21 SRAM cells Radiation effects Arrays Stability criteria Circuit stability Voltage measurement Logic gates Stability static random-access memory (SRAM) cell total ionizing dose (TID)
	Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies 期刊论文 NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13 作者: He, Ze; Zhao, Shi-Wei; Liu, Tian-Qi; Cai, Chang; Yan, Xiao-Yu 收藏 \| 浏览/下载：71/0 \| 提交时间：2022/01/12 Double interlocked storage cell (DICE) Error detection and correction (EDAC) code Heavy ion Radiation hardening technology Single event upset (SEU) Static random-access memory (SRAM)
	Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire 期刊论文 ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: - 作者: Shih, Yu-Chuan; Lee, Ling; Liang, Kai-De; Manikandan, Arumugam; Liu, Wen-Wu 收藏 \| 浏览/下载：7/0 \| 提交时间：2021/03/12 Copper Copper oxides Nanocrystalline materials Nanowires Oxide minerals RRAM Single crystals Fabrication process High current densities Random access memory Resistive switching Resistive switching memory Switching behaviors Switching mechanism Switching properties
	Towards In-Network Compact Representation: Mergeable Counting Bloom Filter Vis Cuckoo Scheduling 期刊论文 IEEE ACCESS, 2021, 卷号: 9, 页码: 55329-55339 作者: Liu, Wenjing; Xu, Zhiwei; Tian, Jie; Zhang, Yujun 收藏 \| 浏览/下载：13/0 \| 提交时间：2021/12/01 Arrays Merging Random access memory Edge computing Distributed databases Schedules Electronic mail Edge computing in-network data representation compact representation mergeable counting bloom filter cuckoo-based bit array scheduling
	Hardware Acceleration for GCNs via Bidirectional Fusion 期刊论文 IEEE COMPUTER ARCHITECTURE LETTERS, 2021, 卷号: 20, 期号: 1, 页码: 4 作者: Li, Han; Yan, Mingyu; Yang, Xiaocheng; Deng, Lei; Li, Wenming 收藏 \| 浏览/下载：25/0 \| 提交时间：2021/12/01 Random access memory Computational modeling Analytical models Hardware Engines Computer architecture Transforms Graph convolutional neural networks hardware accelerator bidirectional execution inter-phase fusion
	Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 12, 页码: 4660-4669 作者: Wu, Bi; Wang, Chao; Wang, Zhaohao; Wang, Ying; Zhang, Deming 收藏 \| 浏览/下载：47/0 \| 提交时间：2021/12/01 Random access memory Magnetic tunneling Switches Reliability Tunneling magnetoresistance Metals Transistors SOT-MRAM low power high speed high reliability
	An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design 期刊论文 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 8, 页码: 1851-1860 作者: Wu, Bi; Zhang, Beibei; Cheng, Yuanqing; Wang, Ying; Liu, Dijun 收藏 \| 浏览/下载：73/0 \| 提交时间：2019/12/10 Error correction code (ECC) last level cache (LLC) reliability spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) temperature

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