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期刊论文 [47]
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High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:
J.-M.Shang
;
J.Feng
;
C.-A.Yang
;
S.-W.Xie
;
Y.Zhang
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors
Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers
期刊论文
Ieee Journal of Quantum Electronics, 2019, 卷号: 55, 期号: 3, 页码: 7
作者:
D.Quandt
;
D.Arsenijevic
;
A.Strittmatte
;
D.H.Bimberg
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2020/08/24
Submonolayer (SML),quantum dot (QD),laser diode,high-speed modulation,quantum-well lasers,dot lasers,gain,threshold,Engineering,Physics,Optics
2D Ruddlesden-Popper Perovskites Microring Laser Array
期刊论文
ADVANCED MATERIALS, 2018, 卷号: 30, 期号: 15
作者:
Zhang, Haihua
;
Liao, Qing
;
Wu, Yishi
;
Zhang, Zhaoyi
;
Gao, Qinggang
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  |  
浏览/下载:47/0
  |  
提交时间:2019/04/09
2d Perovskites
Amplified Spontaneous Emissions
Energy Cascade
Laser Array
Multiple Quantum Well
2D Ruddlesden–Popper Perovskites Microring Laser Array(Article)
期刊论文
Advanced Materials, 2018, 卷号: Vol.30 No.15
作者:
Zhang, H.
;
Liao, Q.
;
Wu, Y.
;
Zhang, Z.
;
Gao, Q.
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  |  
浏览/下载:4/0
  |  
提交时间:2019/11/21
2D perovskites
amplified spontaneous emissions
energy cascade
laser array
multiple quantum well
Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes
期刊论文
Micromachines, 2018, 卷号: 9, 期号: 12, 页码: 9
作者:
Zhou, S. J.
;
Xu, H. H.
;
Liu, M. L.
;
Liu, X. T.
;
Zhao, J.
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  |  
浏览/下载:8/0
  |  
提交时间:2019/09/17
flip-chip light-emitting diodes
distributed Bragg reflector
light
output power
external quantum efficiency
quantum-well
p-type
leds
performance
wavelength
contacts
ito/dbr
laser
power
fabrication
Science & Technology - Other Topics
Instruments & Instrumentation
InGaN低维材料载流子动力学研究及及GaN基绿光垂直腔面发射激光器制作
学位论文
2016, 2015
翁国恩
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  |  
浏览/下载:6/0
  |  
提交时间:2017/06/20
InGaN低维材料
非对称耦合量子阱
量子点
载流子动力学
垂直腔面发射激光器
Low-dimensional InGaN material
Asymmetric coupled quantum well
Quantum dot
Carrier dynamics
Vertical cavity surface emitting laser
Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing
期刊论文
2015, 卷号: 644, 页码: 398-403
作者:
Lin, Tao
;
Zhang, Haoqing
;
Sun, Ruijuan
;
Duan, Yupeng
;
Lin, Nan
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  |  
浏览/下载:4/0
  |  
提交时间:2019/12/20
Quantum well intermixing
Laser diode
Red-shift
XPS
Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films
期刊论文
2015, 卷号: 29, 页码: 150-154
作者:
Lin, Tao
;
Zhang, Haoqing
;
Sun, Hang
;
Yang, Chen
;
Lin, Nan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/20
Quantum well intermixing
AlGaInP
Diode laser
HfO2
Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers
期刊论文
http://dx.doi.org/10.1038/srep04325, 2014
Chen, Shaoqiang
;
Ito, Takashi
;
Asahara, Akifumi
;
Yoshita, Masahiro
;
Liu, Wenjie
;
Zhang, Jiangyong
;
Zhang, Baoping
;
Suemoto, Tohru
;
Akiyama, Hidefumi
;
刘文杰
;
张江勇
;
张保平
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/07/22
LINEWIDTH ENHANCEMENT FACTOR
QUANTUM-WELL LASERS
SEMICONDUCTOR-LASER
OPTICAL STORAGE
BLUE
GENERATION
DIODES
POLARIZATION
EXCITATION
GREEN
Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE)
会议论文
2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China
Liang X.
;
Wang L.
;
Ning Y.
;
Liu Y.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/03/25
920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method
self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode
the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1
2 and 3) in one period
QW depth
barrier width
the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis
we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device
the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications
Switzerland.
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