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CORC

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Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
作者:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
收藏  |  浏览/下载：61/0  |  提交时间：2021/02/02
Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
作者:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
收藏  |  浏览/下载：40/0  |  提交时间：2021/02/02
Aqueous solution-processed, self-flattening AlOx:Y dielectrics for fully-transparent thin-film transistors 期刊论文
CERAMICS INTERNATIONAL, 2019, 卷号: 45, 期号: 13, 页码: 15883-15891
作者:  Wu, Weihua;  Liang, Lingyan;  Yu, Jingjing;  Xiao, Xi;  Zhang, Hongliang
收藏  |  浏览/下载：58/0  |  提交时间：2019/12/18
EMI mitigation in switching power converters combining closed-loop gate drive and chaotic frequency modulation technique 期刊论文
IET POWER ELECTRONICS, 2019, 卷号: 12, 页码: 3033-3040
作者:  Cui, Tongkai;  Ma, Qishuang;  Xu, Ping;  Zhang, Poming
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/30
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang
收藏  |  浏览/下载：67/0  |  提交时间：2019/06/10
Efficient skyrmion transport mediated by a voltage controlled magnetic anisotropy gradient 期刊论文
NANOSCALE, 2018, 卷号: 10, 期号: 2, 页码: 733-740
作者:  Wang, Xuan;  Gan, W. L.;  Martinez, J. C.;  Tan, F. N.;  Jalil, M. B. A.
收藏  |  浏览/下载：5/0  |  提交时间：2019/11/15
Liquid Metal Magnetohydrodynamic Pump for Junction Temperature Control of Power Modules 期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 卷号: 33, 页码: 10583-10593
作者:  Yerasimou, Yerasimos;  Pickert, Volker;  Ji, Bing;  Song, Xueguan
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/02
Carbon-Dots-Based Lab-On-a-Nanoparticle Approach for the Detection and Differentiation of Antibiotics 期刊论文
CHEMISTRY-A EUROPEAN JOURNAL, 2018, 卷号: 24, 期号: 18, 页码: 4703-4709
作者:  Qiao, Li'na;  Qian, Sihua;  Wang, Yuhui;  Yan, Shifeng;  Lin, Hengwei
收藏  |  浏览/下载：34/0  |  提交时间：2018/12/04
Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: Vol.757, 页码: 288-297
作者:  J.G. Lv;  Y.M. Liu;  P.H. Wang;  S.S. Jiang;  G. He
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.4
作者:  Wendong Li;  Shuang Liang;  Li Zhu;  Mao Liu;  Mingliang Tian
收藏  |  浏览/下载：44/0  |  提交时间：2019/04/22

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