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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Empirical Exploring Word-Character Relationship for Chinese Sentence Representation 期刊论文 ACM TRANSACTIONS ON ASIAN AND LOW-RESOURCE LANGUAGE INFORMATION PROCESSING, 2018, 卷号: 17, 期号: 3, 页码: 14 作者:  Wang, Shaonan;  Zhang, Jiajun;  Zong, Chengqing 收藏  |  浏览/下载：17/0  |  提交时间：2018/03/01 Sentence Representation  Compositionmodel  Inner-word Character  Mixed Character-word Representation  Mask Gate  Max Pooling   Empirical Exploring Word-Character Relationship for Chinese Sentence Representation 期刊论文 ACM TRANSACTIONS ON ASIAN AND LOW-RESOURCE LANGUAGE INFORMATION PROCESSING, 2018, 卷号: 17, 期号: 3, 页码: 14 作者:  Wang, Shaonan;  Zhang, Jiajun;  Zong, Chengqing 收藏  |  浏览/下载：14/0  |  提交时间：2020/10/27 Sentence Representation  Compositionmodel  Inner-word Character  Mixed Character-word Representation  Mask Gate  Max Pooling   Recurrently Decomposable 2-D Convolvers for FPGA-Based Digital Image Processing 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2016, 卷号: 63, 期号: 10, 页码: 979-983 作者:  Ma, Zhao-Bin;  Yang, Yang;  Liu, Yun-Xia;  Bharath, Anil Anthony 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/16 Field-programmable gate arrays (FPGAs)  large convolution mask  recurrently decomposable (RD)  two-dimensional (2-D) convolution   Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask 期刊论文 ieee electron device letters, 2014 Xu, Zhe; Wang, Jinyan; Liu, Jingqian; Jin, Chunyan; Cai, Yong; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Self-terminating  normally-off  AlGaN/GaN MOSFET  GaN cap layer  gate recess  recess mask  MODE  TRANSISTORS  INTERFACE  HFET   Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 12, 页码: 1197-1199 作者:  Cai, Y (蔡勇) 收藏  |  浏览/下载：17/0  |  提交时间：2015/02/03 Self-terminating  normally-off  AlGaN/GaN MOSFET  GaN cap layer  gate recess  recess mask   X-ray lithography technology for the fabrication of deep-submicron T-shaped gate 期刊论文 HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2003, 卷号: 27, 页码: #REF! 作者:  Xie, CQ;  Chen, DP;  Li, B;  Wang, DQ;  Ye, TC 收藏  |  浏览/下载：17/0  |  提交时间：2016/04/12 X-ray lithography  X-ray mask  deep-submicron T-shaped gate  blur