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Method for obtaining junction temperature of power semiconductor devices combining computational fluid dynamics and thermal network
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 卷号: 976, 页码: 10
作者:
Peng, Lisha
;
Shen, Wanzeng
;
Feng, Anhui
;
Liu, Yan
;
Gao, Daqing
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2021/12/09
IGBT module
Junction temperature
Thermal network
CFD simulation
Cold plate
Assessing electric vehicle inverter to reduce energy consumption: using insulated gate bipolar transistor module to prevent the power loss and junction temperature
期刊论文
JOURNAL OF CLEANER PRODUCTION, 2019, 卷号: 224, 页码: 60-71
作者:
Li, Ling-Ling
;
Chang, Ji-Dong
;
Wu, Kuo-Jui
;
Tseng, Ming-Lang
;
Li, Zhi-Gang
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/02
Electric vehicle
Insulated gate bipolar transistor module
Switching cycle
Average power loss
Junction temperature
Online junction temperature estimation method for SiC modules with built-in NTC sensor
期刊论文
CPSS Transactions on Power Electronics and Applications, 2019, 卷号: Vol.4 No.1, 页码: 94-99
作者:
Ping Liu
;
Changle Chen
;
Xing Zhang
;
Shoudao Huang
收藏
  |  
浏览/下载:102/0
  |  
提交时间:2019/12/13
Silicon carbide
Junctions
MOSFET
Temperature sensors
Impedance
Heating systems
Mathematical model
Boundary conditions
junction temperature
silicon carbide (SiC)
thermal model.
An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802
作者:
Jun Wang
;
Shiwei Liang
;
Linfeng Deng
;
Xin Yin
;
Z. John Shen
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/13
Silicon carbide
Predictive models
Spontaneous emission
Junctions
SPICE
Temperature
Numerical models
Bipolar junction transistor (BJT)
proportional base driver
SPICE model
surface recombination effect
4H-SiC
An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect.
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802
作者:
Wang, J
;
Liang, SW
;
Deng, LF
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
4H-SiC
Bipolar junction transistor (BJT)
Junctions
Numerical models
Predictive models
proportional base driver
Silicon carbide
SPICE
SPICE model
Spontaneous emission
surface recombination effect
Temperature
Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.2, 页码: 1744-1754
作者:
Jun Wang
;
Zongjian Li
;
Xi Jiang
;
Cheng Zeng
;
Z. John Shen
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/13
Switches
Insulated
gate
bipolar
transistors
Silicon
carbide
MOSFET
Logic
gates
Silicon
Gate
control
hybrid
switch
IGBT
junction
temperature
mosfet
power
loss
SiC
Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction
期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.2, 页码: 1744-1754
作者:
Wang, J
;
Li, ZJ
;
Jiang, X
;
Zeng, C
;
Shen, ZJ
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
Gate control
hybrid switch
IGBT
junction temperature
MOSFET
power loss
SiC
Turn-Off Over-Voltage character of 6500V/600A IGBT Module
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Chen, Juan
;
Cao, Lin
;
Zang, Yuan
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/20
6500V IGBT module
turn-off over voltage
gate resistance
junction temperature
Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2019, 卷号: 55
作者:
Cao, Kaihua
;
Li, Huisong
;
Cai, Wenlong
;
Wei, Jiaqi
;
Wang, Lezhi
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2019/12/30
Perpendicular magnetic tunnel junction (p-MTJ)
spin transfer torque (STT)
spintronics
temperature dependence
Junction Temperature Extraction Methods for Si and SiC Power Devices-a Review and Possible Alternatives [Si和SiC功率器件结温提取技术现状及展望]
期刊论文
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, 2019, 卷号: 34, 页码: 703-716
作者:
Wang, L.
;
Deng, J.
;
Yang, J.
;
Li, W.
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/30
Extraction
Junction gate field effect transistors
Semiconductor junctions
Silicon
Silicon carbide
Wide band gap semiconductors
Health assessments
Intelligent switching
Junction temperatures
Measuring frequency
Online extraction
Reverse breakdown voltage
Temperature characteristic
Temperature sensitive
Power semiconductor devices
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