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Simulation study on piezoelectric characteristics of two-dimensional ZnO nanodiscs
期刊论文
MICRO & NANO LETTERS, 2019, 卷号: 14, 页码: 1029-1032
作者:
Yang, Dechao
;
Qiu, Yu
;
Fang, Shengli
;
Song, Wenbin
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2019/12/02
wide band gap semiconductors
piezoelectricity
semiconductor growth
zinc compounds
nanostructured materials
nanofabrication
finite element analysis
piezoelectric devices
durability
II-VI semiconductors
piezoelectric characteristics
high-performance piezoelectric nanogenerators
aqueous solution method
flexible indium tin oxide coated polyethylene terephthalate substrates
2D ZnO nanodiscs
high-performance piezo-nanodevices
mechanical durability
finite element method
COMSO
Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 1, 页码: 36-39
作者:
Cai, Wensi
;
Wilson, Joshua
;
Zhang, Jiawei
;
Park, Seonghyun
;
Majewski, Leszek
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  |  
浏览/下载:46/0
  |  
提交时间:2019/12/11
Indium-gallium-zinc-oxide
thin-film transistors (TFTs)
plastic
substrate
1 V operation
High-Performance InGaZnO-Based ReRAMs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 6, 页码: 2600-2605
作者:
Ma, Pengfei
;
Liang, Guangda
;
Wang, Yiming
;
Li, Yunpeng
;
Xin, Qian
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  |  
浏览/下载:39/0
  |  
提交时间:2019/12/11
Electrode
indium-gallium-zinc oxide (IGZO)
memory window
oxygen
plasma
resistive random access memories (ReRAMs)
retention time
Temperature-dependent low-frequency noise in indium-zinc-oxide thin-film transistors down to 10 K
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: 66, 期号: 5, 页码: 2192-2197
作者:
Liu, Yuan
;
He, Hongyu
;
Chen, Ya-Yi
;
Chen, Rongsheng*
;
Wang, Li
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  |  
浏览/下载:3/0
  |  
提交时间:2019/12/27
Indium-zinc-oxide (IZO)
low-frequency noise (LFN)
temperature
thin-film transistor (TFT)
The role of DUV laser irradiation in the optical and electrical properties of indium zinc oxide films synthesized by self-combustion
期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 806, 页码: 327-334
作者:
P.Li
;
J.Duan
;
J.G.Ma
;
T.F.Wang
;
H.Y.Xu
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2020/08/24
Transparent conducting film,Indium zinc oxide,Low temperature,Laser,irradiation,Solution combustion,low-temperature,thin-films,transparent
Optoelectronic Synapse Based on IGZO‐Alkylated Graphene Oxide Hybrid Structure
期刊论文
Advanced Functional Materials, 2018, 卷号: 28, 期号: 47, 页码: -
作者:
Sun, Jia
;
Oh, Seyong
;
Choi, Yongsuk
;
Seo, Seunghwan
;
Oh, Min Jun
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  |  
浏览/下载:32/0
  |  
提交时间:2019/12/03
handwritten digit pattern recognition
indium–gallium–zinc oxide photosynaptic devices
neuromorphic computing
optoelectronic spiking process
optoelectronic synapses
Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 1018-1022
作者:
Wan, Da
;
Liu, Xingqiang
;
Abliz, Ablat
;
Liu, Chuansheng
;
Yang, Yanbing
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/21
tungsten (W)-doping
pulsed current-voltage (I-V)
solution processed
Indium zinc oxide (IZO)
thin-film transistors (TFTs)
Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 2844-2849
作者:
Abliz, Ablat
;
Wan, Da
;
Chen, Jui-Yuan
;
Xu, Lei
;
He, Jiawei
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/11/21
passivation layers (PVLs)
light illumination stress stability
Amorphous indium-gallium-zinc oxide (a-In-Ga-ZnO)
thin film transistors (TFTs)
Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 520-525
作者:
Zhong, De-Yao[1]
;
Li, Jun[2]
;
Zhao, Cheng-Yu[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
B doping concentration
boron-doped indium-zinc-oxide (BIZO) thin-film transistors (TFTs)
negative bias illumination stress (NBIS) stability
solution process
Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 11, 页码: 1676-1679
作者:
Yuan, Yuzhuo
;
Yang, Jin
;
Hu, Zhenjia
;
Li, Yunpeng
;
Du, Lulu
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/11
Complementary inverter
indium gallium zinc oxide (InGaZnO or IGZO)
tin
monoxide (SnO)
low-power
high gain
ring oscillator (RO)
thin-film
transistor (TFT)
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