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Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载:36/0  |  提交时间:2019/12/17
Effects of Annealing on Enhancement-Mode AlGaN/GaN/AlGaN Double Heterostructures HEMTs with Different GaN Channel Layer Thickness 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2019, 卷号: Vol.14 No.2, 页码: 184-188
作者:  Wang, Xin;  He, Yun-Long;  He, Qing;  Wang, Chong;  Lei, Wei-Ning
收藏  |  浏览/下载:24/0  |  提交时间:2019/12/17
Effects of Annealing on Enhancement-Mode AlGaN/GaN/AlGaN Double Heterostructures HEMTs with Different GaN Channel Layer Thickness 期刊论文
2019, 卷号: 14, 页码: 184-188
作者:  Wang, Xin;  He, Yun-Long;  He, Qing;  Wang, Chong;  Lei, Wei-Ning
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/20
InAlN/GaN异质结横向组分不均匀散射机制的研究 学位论文
: 西安理工大学, 2019
作者:  陈谦
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/20
Mechanism of Buffer-Related Current Collapse in AlGaN/GaN HEMT 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:  Liu, Jing;  Huang, Zhongxiao
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/20
Compact and Efficient Wideband Variable Gain LNA MMIC on InGaAs pHEMT 会议论文
PROCEEDINGS OF 2019 16TH INTERNATIONAL BHURBAN CONFERENCE ON APPLIED SCIENCES AND TECHNOLOGY (IBCAST), 2019-01-01
作者:  Dilshad, Umar;  Chen, Chen;  Miao, Jungang
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/30
Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 430, 页码: 59-63
作者:  Hu, P. P.;  Liu, J.;  Zhang, S. X.;  Maaz, K.;  Zeng, J.
收藏  |  浏览/下载:27/0  |  提交时间:2018/10/08
C波段有源微波冷噪声源设计及其性能分析 期刊论文
电子学报, 2018, 卷号: 46, 期号: 11, 页码: 2797-2802
作者:  董帅;  王振占;  李彬;  陆浩;  贺秋瑞
收藏  |  浏览/下载:20/0  |  提交时间:2019/03/05
TCAD Simulation for nonresonant terahertz detector based on double-channel GaN/AlGaN high-electron-mobility transistor 期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 4807-4813
作者:  Meng, Qingzhi;  Lin, Qijing;  Jing, Weixuan;  Han, Feng;  Zhao, Man
收藏  |  浏览/下载:44/0  |  提交时间:2019/11/19
金刚石衬底氮化镓 HEMT大功率器件热分析 学位论文
2018
作者:  陈旭东
收藏  |  浏览/下载:2/0  |  提交时间:2019/11/26


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