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Metal–insulator transition in few-layered GaTe transistors
期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
作者:
Xiuxin Xia
;
Xiaoxi Li
;
Hanwen Wang
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2021/02/02
metal-insulator
transition
gate
tunable
GaTe
field
effect
transistors
Metal–insulator transition in few-layered GaTe transistors
期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
作者:
Xiuxin Xia
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2021/02/02
metal-insulator
transition
gate
tunable
GaTe
field
effect
transistors
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
收藏
  |  
浏览/下载:106/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 792, 页码: 543-549
作者:
Ma, Pengfei
;
Sun, Jiamin
;
Zhang, Guanqun
;
Liang, Guangda
;
Xin, Qian
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/12/11
HfAlO
High-k
Gate insulator
A-InGaZnO
Thin-film transistor
Atomic
layer deposition
Low-power device
A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1390-1395
作者:
Xiaorong Luo
;
Yang Yang
;
Tao Sun
;
Jie Wei
;
Diao Fan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
Anodes
Resistance
Current density
Silicon-on-insulator
Insulated gate bipolar transistors
Spontaneous emission
Sun
Low-loss
p-type polysilicon
self-adaptive resistance (SAR)
shorted-anode (SA)
snapback-free
silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT)
Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 526-532
作者:
Zhao, Cheng-Yu[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
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  |  
浏览/下载:16/0
  |  
提交时间:2019/04/24
ZrO2 gate insulator
lanthanum(La) indium oxide (LaInO) thin-film transistors (TFTs)
solution process
stability
Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2017
Xiao, Mengmeng
;
Qiu, Chenguang
;
Zhang, Zhiyong
;
Peng, Lian-Mao
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
atomic layer deposition
HfO2 graphene
high k
gate insulator
FIELD-EFFECT TRANSISTORS
GATE DIELECTRICS
CARBON NANOTUBES
METAL-OXIDES
PERFORMANCE
ELECTRONICS
Atomic layer deposition deposited high dielectric constant (K) ZrA10(x) gate insulator enabling high performance ZnSnO thin film transistors
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 109, 页码: 852-859
作者:
Huang, Chuan-Xin[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Zhao, Cheng-Yu[4]
;
Zhu, Wen-Qing[5]
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/04/24
Atomic layer deposition
ZrA10(x) gate insulator
ZTO TFTs
PBS stability
TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 卷号: 61, 页码: 125-130
作者:
Fu, Yi-Zhou[1]
;
Li, Jun[2]
;
Zhao, Cheng-Yu[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/04/24
Oxygen partial pressure
TiSiOx gate insulator
InGaZnO-TFTs
Density of states
SEGR-and SEB-hardened structure with DSPSOI in power MOSFETs
期刊论文
2017, 卷号: 38, 期号: 12, 页码: 68-72
作者:
Zhaohuan Tang
;
Xinghua Fu
;
Fashun Yang
;
Kaizhou Tan
;
Kui Ma
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/31
power MOSFETs
partial silicon-on-insulator
single event gate rupture
single event burnout
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