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Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
作者:  Xiuxin Xia;  Xiaoxi Li;  Hanwen Wang
收藏  |  浏览/下载：63/0  |  提交时间：2021/02/02
Metal–insulator transition in few-layered GaTe transistors 期刊论文
半导体学报:英文版, 2020, 卷号: 41.0, 期号: 007, 页码: 28-32
作者:  Xiuxin Xia
收藏  |  浏览/下载：41/0  |  提交时间：2021/02/02
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ]
收藏  |  浏览/下载：106/0  |  提交时间：2019/05/14
Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 792, 页码: 543-549
作者:  Ma, Pengfei;  Sun, Jiamin;  Zhang, Guanqun;  Liang, Guangda;  Xin, Qian
收藏  |  浏览/下载：14/0  |  提交时间：2019/12/11
A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1390-1395
作者:  Xiaorong Luo;  Yang Yang;  Tao Sun;  Jie Wei;  Diao Fan
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17
Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 526-532
作者:  Zhao, Cheng-Yu[1];  Li, Jun[2];  Zhong, De-Yao[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5]
收藏  |  浏览/下载：16/0  |  提交时间：2019/04/24
Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2017
Xiao, Mengmeng; Qiu, Chenguang; Zhang, Zhiyong; Peng, Lian-Mao
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
Atomic layer deposition deposited high dielectric constant (K) ZrA10(x) gate insulator enabling high performance ZnSnO thin film transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 109, 页码: 852-859
作者:  Huang, Chuan-Xin[1];  Li, Jun[2];  Zhong, De-Yao[3];  Zhao, Cheng-Yu[4];  Zhu, Wen-Qing[5]
收藏  |  浏览/下载：11/0  |  提交时间：2019/04/24
TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 卷号: 61, 页码: 125-130
作者:  Fu, Yi-Zhou[1];  Li, Jun[2];  Zhao, Cheng-Yu[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5]
收藏  |  浏览/下载：8/0  |  提交时间：2019/04/24
SEGR-and SEB-hardened structure with DSPSOI in power MOSFETs 期刊论文
2017, 卷号: 38, 期号: 12, 页码: 68-72
作者:  Zhaohuan Tang;  Xinghua Fu;  Fashun Yang;  Kaizhou Tan;  Kui Ma
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31

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