×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京大学 [20]
安徽大学 [17]
上海微系统与信息技... [12]
合肥物质科学研究院 [10]
清华大学 [7]
西安交通大学 [5]
更多...
内容类型
期刊论文 [101]
会议论文 [8]
其他 [3]
发表日期
2019 [3]
2018 [8]
2017 [7]
2016 [7]
2015 [5]
2014 [11]
更多...
学科主题
Materials ... [3]
Physics [3]
Physics, M... [3]
Engineerin... [2]
Physics, A... [2]
701.1 elec... [1]
更多...
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共112条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
作者升序
作者降序
提交时间升序
提交时间降序
题名升序
题名降序
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:
Wang, Die
;
He, Gang
;
Liang, Shuang
;
Liu, Mao
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2020/03/31
Dy2O3 gate dielectrics
High-k
Annealing temperature
Optical properties
Electrical characteristics
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides
期刊论文
Journal of Alloys and Compounds, 2019, 卷号: Vol.778, 页码: 579-587
作者:
Shuang Liang
;
Die Wang
;
Mao Liu
;
Gang He
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/04/24
DyO
gate
dielectrics
High-k
Annealing
temperature
Optical
properties
Electrical
characteristics
Aqueous solution-processed, self-flattening AlOx:Y dielectrics for fully-transparent thin-film transistors
期刊论文
CERAMICS INTERNATIONAL, 2019, 卷号: 45, 期号: 13, 页码: 15883-15891
作者:
Wu, Weihua
;
Liang, Lingyan
;
Yu, Jingjing
;
Xiao, Xi
;
Zhang, Hongliang
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2019/12/18
METAL-OXIDE-SEMICONDUCTOR
LOW-TEMPERATURE
HIGH-PERFORMANCE
SOL-GEL
GATE DIELECTRICS
HIGH-MOBILITY
LOW-VOLTAGE
ELECTRICAL PERFORMANCE
COMBUSTION SYNTHESIS
WATER
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:
Yang YM(杨育梅)
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2020/11/13
Ballistics
Dielectric materials
Drain current
Gate dielectrics
MOSFET devices
Poisson equation
Shims
Direct current performance
High- k
junctionless
Junctionless transistors
Non-equilibrium green functions
Nonequilibrium green function formalisms
Quantum simulators
Subthreshold characteristics
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:
Jiang, Shanshan
;
He, Gang
;
Liu, Mao
;
Zhu, Li
;
Liang, Shuang
收藏
  |  
浏览/下载:68/0
  |  
提交时间:2019/06/10
electrical properties
forming gas annealing
high-k gate dielectrics
interface chemistry
metal-oxide-semiconductor capacitors
Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7566-7572
作者:
Liang, Lingyan
;
Wu, Weihua
;
Cao, Hongtao
;
Lan, Linfeng
;
Yao, Meiyi
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2018/12/04
Amorphous Oxide Semiconductors
Field-effect Transistors
Low-temperature
Gate Dielectrics
Low-voltage
Photochemical Activation
Electrical Performance
Combustion Synthesis
High-mobility
Electronics
Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7566-7572
作者:
Wu, Weihua
;
Liang, Yu
;
Cao, Hongtao
;
Lan, Linfeng
;
Yao, Meiyi
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2018/12/04
Amorphous Oxide Semiconductors
Field-effect Transistors
Low-temperature
Gate Dielectrics
Low-voltage
Photochemical Activation
Electrical Performance
Combustion Synthesis
High-mobility
Electronics
Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics
期刊论文
Journal of Alloys and Compounds, 2018, 卷号: Vol.757, 页码: 288-297
作者:
J.G. Lv
;
Y.M. Liu
;
P.H. Wang
;
S.S. Jiang
;
G. He
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
High-k
gate
dielectrics
HfGdO
Electrical
properties
Metal
oxide
semiconductor
transistors
Leakage
current
density
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing
期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.4
作者:
Wendong Li
;
Shuang Liang
;
Li Zhu
;
Mao Liu
;
Mingliang Tian
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2019/04/22
electrical
properties
forming
gas
annealing
high‐k
gate
dielectrics
interface
chemistry
metal‐oxide‐semiconductor
capacitors
Nontoxic, Eco‐friendly Fully Water‐Induced Ternary Zr–Gd–O Dielectric for High‐Performance Transistors and Unipolar Inverters
期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.5
作者:
Wendong Li
;
Li Zhu
;
Elvira Fortunato
;
Bing Yang
;
Gang He
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
eco‐friendly
electronics
electrical
properties
high‐k
gate
dielectrics
thin‐film
transistors
water‐induced
method
©版权所有 ©2017 CSpace - Powered by
CSpace