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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 4H-SiC Step Trench Gate Power Metal-Oxide-Semiconductor Field-Effect Transistor 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2016, 卷号: 37, 期号: [db:dc_citation_issue], 页码: 633-635 作者:  Wang, Ying;  Tian, Kai;  Hao, Yue;  Yu, Cheng-Hao;  Liu, Yan-Juan 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/02 Trench-gate UMOSFET  on-state specific resistance (Ron-sp)  breakdown voltage (BV)  specific gate-drain charge (Qgd-sp)   A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Hu, Yue; Wang, Hao; Du, Caixia; Ma, Miaomiao; Chan, Mansun; He, Jin; Wang, Gaofeng 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Breakdown voltage (BV)  lateral double-diffused MOS (LDMOS)  N-island (NIS)  partial silicon-on-insulator (PSOI)  step-doped drift (SDD) region  BURIED P LAYER  POWER LDMOS  IMPROVEMENT  DEVICES  TRENCH  FILM  TRANSISTOR   A High-Voltage (> 600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 5 作者:  Hu, Yue;  Wang, Hao;  Du, Caixia;  Ma, Miaomiao;  Chan, Mansun 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/05 Breakdown voltage (BV)  lateral double-diffused MOS (LDMOS)  N-island (NIS)  partial silicon-on-insulator (PSOI)  step-doped drift (SDD) region   An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: [db:dc_citation_issue], 页码: 2774-2778 作者:  Wang, Ying;  Tian, Kai;  Hao, Yue;  Yu, Cheng-Hao;  Liu, Yan-Juan 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02 gate-drain charge (Q(Gd))  breakdown voltage (BV)  U-shaped trench gate MOSFET (UMOSFET)  4H-SiC  ON-state specific resistance (RON-sp)   Thin-film LDMOS on partial SOI with improved breakdown voltage and suppressed kink effect 期刊论文 INTERNATIONAL JOURNAL OF ELECTRONICS, 2014, 卷号: 101, 期号: 1 作者:  Hu, Yue;  Wang, Gaofeng;  Chang, Sheng;  Wang, Hao;  Huang, Qijun 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/05 breakdown voltage (BV)  kink effect  lateral double-diffused MOS (LDMOS)  thin-film partial silicon-on-insulator (TF PSOI)   A Novel High-Voltage (> 600 V) LDMOSFET With Buried N-Layer in Partial SOI Technology 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 卷号: 59, 期号: 4 作者:  Hu, Yue;  Huang, Qijun;  Wang, Gaofeng;  Chang, Sheng;  Wang, Hao 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/05 Breakdown voltage (BV)  buried N-type layer (BNL)  lateral double-diffused metal-oxide-semiconductor (LDMOS)  ON-resistance (R-on)  partial silicon-on-insulator (PSOI)