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CORC

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Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：36/0  |  提交时间：2019/12/17
Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer 期刊论文
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, 2019
作者:  Guo, Haijun;  Cao, Chao;  Duan, Baoxing
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11
Two-Dimensional Analytical Model of AlGaN/GaN HEMTs with a Ftched AlGaN Barrier Layer 会议论文
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 12-14, 2019
作者:  Guo, Haijun;  Cao, Chao;  Duan, Baoxing
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:  Z.M.Shi;  X.J.Sun;  Y.P.Jia;  X.K.Liu;  S.L.Zhang
收藏  |  浏览/下载：1/0  |  提交时间：2020/08/24
Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs 会议论文
作者:  Cui, Miao;  Cai, Yutao;  Lam, Sang;  Liu, Wen;  Zhao, Chun
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26
Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam-Induced Current 期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2018, 卷号: Vol.18 No.3, 页码: 359-363
作者:  Chen, Lixiang;  Ma, Xiaohua;  Zhu, Jiejie;  Hou, Bin;  Zhu, Qing
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/26
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: Vol.64 No.8, 页码: 3139-3144
作者:  Li, Y;  Guo, YX
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/31
Positive Shift in Threshold Voltage Induced by CuO and NiOₓ Gate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 页码: 1-6
作者:  Yi Li;  Yaxiong Guo;  Kai Zhang;  Xuming Zou;  Jingli Wang
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/31
Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs 会议论文
作者:  Yu, Kun;  Liu, Chao;  Jiang, Huaxing;  Lu, Xing;  Lau, Kei May
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26
Suppression of current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation 会议论文
作者:  Jiang, Huaxing;  Liu, Chao;  Lu, Xing;  Lau, Kei May
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26

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