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北京大学 [6]
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Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:
Hongliang Zhao
;
Lin-An Yang
;
Hao Zou
;
Xiao-hua Ma
;
Yue Hao
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2019/12/17
HEMTs
Wide band gap semiconductors
Aluminum gallium nitride
Logic gates
Oscillators
Mathematical model
Schottky diodes
AlGaN/GaN
electron domain
high-electron mobility transistor (HEMT)
recessed barrier layer (RBL)
terahertz
Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer
期刊论文
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, 2019
作者:
Guo, Haijun
;
Cao, Chao
;
Duan, Baoxing
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/11
AlGaN/GaN HEMTs
Analytical model
Electric field modulation
Two-Dimensional Analytical Model of AlGaN/GaN HEMTs with a Ftched AlGaN Barrier Layer
会议论文
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 12-14, 2019
作者:
Guo, Haijun
;
Cao, Chao
;
Duan, Baoxing
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/31
AlGaN/GaN HEMTs
analytical model
electric field modulation
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles
期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:
Z.M.Shi
;
X.J.Sun
;
Y.P.Jia
;
X.K.Liu
;
S.L.Zhang
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics
Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs
会议论文
作者:
Cui, Miao
;
Cai, Yutao
;
Lam, Sang
;
Liu, Wen
;
Zhao, Chun
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/26
AlGaN/GaN MIS-HEMTs
Frequency dependence
Frequency independent
High-voltage switching
Metal-insulator-semiconductors
MIS-HEMT
Threshold voltage shifts
Voltage hysteresis
Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam-Induced Current
期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2018, 卷号: Vol.18 No.3, 页码: 359-363
作者:
Chen, Lixiang
;
Ma, Xiaohua
;
Zhu, Jiejie
;
Hou, Bin
;
Zhu, Qing
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/26
AlGaN/GaN
high-electron-mobility
transistors
(HEMTs)
electron
beam-induced
current
(EBIC)
gate
leakage
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs
期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: Vol.64 No.8, 页码: 3139-3144
作者:
Li, Y
;
Guo, YX
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/31
Logic gates
HEMTs
MODFETs
Aluminum gallium nitride
Wide band gap semiconductors
Threshold voltage
AlGaN/GaN
CUO gate
NiOₓ gate
p-type metal oxide
threshold voltage
Positive Shift in Threshold Voltage Induced by CuO and NiOₓ Gate in AlGaN/GaN HEMTs
期刊论文
IEEE Transactions on Electron Devices, 2017, 页码: 1-6
作者:
Yi Li
;
Yaxiong Guo
;
Kai Zhang
;
Xuming Zou
;
Jingli Wang
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/12/31
Logic gates
HEMTs
MODFETs
Aluminum gallium nitride
Wide band gap semiconductors
Threshold voltage
AlGaN/GaN
CuO gate
NiOₓ
gate
p-type metal oxide
threshold voltage.
Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs
会议论文
作者:
Yu, Kun
;
Liu, Chao
;
Jiang, Huaxing
;
Lu, Xing
;
Lau, Kei May
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/11/26
AlGaN/GaN MIS-HEMTs
Current collapse
I-V measurements
Interface traps
LPCVD SiNx
Metal insulator semiconductor high electron mobility transistors (MISHEMT)
Passivation layer
Plasma enhanced chemical vapor depositions (PE CVD)
Suppression of current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation
会议论文
作者:
Jiang, Huaxing
;
Liu, Chao
;
Lu, Xing
;
Lau, Kei May
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/26
AlGaN/GaN MIS-HEMTs
Current collapse
GaN based
ON/OFF current ratio
Power switching applications
SiN gate dielectrics
Subthreshold slope
Surface passivation
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