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浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9 作者:  Liu, Yan;  Lin, Zhao-Jun;  Lv, Yuan-Jie;  Cui, Peng;  Fu, Chen 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11 AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs)  parasitic source resistance  polarization Coulomb field scattering   Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 806-815 作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11 AlGaN/AlN/GaN HFETs  Strain distribution  Passivation  Polarization  coulomb field scattering   Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 85, 页码: 43-49 作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Wang, Yutang;  Li, Zhiyuan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Sapphire substrate thickness  Strain   A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 79, 页码: 21-28 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Strain  Ohmic contact   Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Superlattices and microstructures, 2015, 页码: 43-49 作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Wang, Yutang;  Li, Zhiyuan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Sapphire substrate thickness  Strain   A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Superlattices and microstructures, 2015, 页码: 21-28 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Strain  Ohmic contact   Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Physica, E. Low-dimensional systems & nanostructures, 2014, 页码: 76-79 作者:  Chongbiao Luan;  Zhaojun Lin;  Yuanjie Lv;  Zhihong Feng;  Jingtao Zhao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Subthreshold swing  Polarization Coulomb field scattering  AlGaN/AlN/GaN HFETs   Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 卷号: 62, 页码: 76-79 作者:  Luan, Chongbiao;  Lin, Zhaojun;  Lv, Yuanjie;  Feng, Zhihong;  Zhao, Jingtao 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/17 Subthreshold swing  Polarization Coulomb field scattering  AlGaN/AlN/GaN  HFETs