|
已选(0)清除
条数/页： 排序方式：
|
| Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 2
作者: Lu Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun
  收藏 | 浏览/下载：4/0 | 提交时间：2019/12/17
|
| Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes 期刊论文
Chinese Physics B, 2014, 期号: 02, 页码: 430-434
作者: Lv YJ(吕元杰); Feng ZH(冯志红); Gu GD(顾国栋); Dun SB(敦少博); Yin JY(尹甲运)
收藏 | 浏览/下载：4/0 | 提交时间：2019/12/17
|
| Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 2
作者: Lu Yuan-Jie; Feng Zhi-Hong; Lin Zhao-Jun; Gu Guo-Dong; Dun Shao-Bo
收藏 | 浏览/下载：4/0 | 提交时间：2019/12/17
|
| Thickness measurement of GaN films by X-ray diffraction 期刊论文
2010, 2010
Li Hong-Tao; Luo Yi; Xi Guang-Yi; Wang Lai; Jiang Yang; Zhao Wei; Han Yan-Jun; Hao Zhi-Biao; Sun Chang-Zheng
收藏 | 浏览/下载：4/0 |
| Influence of pit defects on AIGaN surface and dislocation defects in GaN buffer layer on current collapse of AIGaN/GaN HEMTs 期刊论文
2010, 2010
Xi Guang-Yi; Ren Fan; Hao Zhi-Biao; Wang Lai; Li Hong-Tao; Jiang Yang; Zhao Wei; Han Yan-Jun; Luo Yi
收藏 | 浏览/下载：4/0 |
| A new small-signal modeling and extraction method in AlGaN-GaN HEMTs 期刊论文
2010, 2010
Lu Jing; Wang Yan; Ma Long; Yu Zhiping
收藏 | 浏览/下载：7/0 |
| AlGaN/GaN HEMT device optimization and I-V characteristics 期刊论文
2010, 2010
Ma Long; Wang Yan; Yu Zhiping; Tian Lilin
收藏 | 浏览/下载：3/0 |
| Optimization of two-dimensional electron gases and I-V characteristics for AlGaN/GaN HEMT devices 期刊论文
2010, 2010
Yan Wang; Long Ma; Zhiping Yu; Lilin Tian
收藏 | 浏览/下载：4/0 |
