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Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure
期刊论文
ELECTRONICS, 2019, 卷号: 8
作者:
Huang, Huolin
;
Li, Feiyu
;
Sun, Zhonghao
;
Sun, Nan
;
Zhang, Feng
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/12/02
vertical field-effect transistor (VFET)
back current blocking layer (BCBL)
gallium nitride (GaN)
normally off power devices
Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2019, 卷号: 108, 页码: 197-201
作者:
Huang, Huolin
;
Sun, Zhonghao
;
Zhang, Feng
;
Li, Feiyu
;
Cao, Yaqing
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/12/02
Ohmic contacts
Modeling process
Semiconductor devices
Gallium nitride
Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure
期刊论文
Electronics, 2019, 卷号: 8, 页码: 241
作者:
Huolin Huang
;
Feiyu Li
;
Zhonghao Sun
;
Nan Sun
;
Feng Zhang
;
Yaqing Cao
;
Hui Zhang Pengcheng Tao
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2020/07/30
Tailoring Surface Opening of Hollow Nanocubes and Their Application as Nanocargo Carriers
期刊论文
ACS CENTRAL SCIENCE, 2018, 卷号: 4, 期号: 12, 页码: 1742-1750
作者:
Lu, Fang
;
Xin, Huolin
;
Xia, Weiwei
;
Liu, Mingzhao
;
Zhang, Yugang
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2020/03/31
Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures
期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
作者:
Huang Huolin
;
Sun Zhonghao
;
Cao Yaqing
;
Li Feiyu
;
Zhang Feng
;
Wen Zhengxin
;
Zhang Zifeng
;
Liang Yung C.
;
Hu Lizhong
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/11/15
Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 卷号: 51
作者:
Huang, Huolin
;
Sun, Zhonghao
;
Cao, Yaqing
;
Li, Feiyu
;
Zhang, Feng
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/02
gallium nitride (GaN)
semiconductor devices
surface donor-like traps
current collapse
Obtaining Exact Electrical Parameters in Semiconductor Ohmic Contacts Using a Novel Electrode Pair Layout Design
会议论文
2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01
作者:
Huang, Huolin
;
Sun, Zhonghao
;
Cao, Yaqing
;
Li, Feiyu
;
Hu, Lizhong
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/12/02
Electrode Pair (EP)
Ohmic contact
IC design
Modelling
The Double Burdens of Mental Health Among AIDS Patients With Fully Successful Immune Restoration: A Cross-Sectional Study of Anxiety and Depression in China
期刊论文
2018, 卷号: 9, 页码: 384
作者:
Huang Xiaojie
;
Meyers Kathrine
;
Liu Xinchao
;
Li Xia
;
Zhang Tong
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2020/01/03
HIV-1
Hospital Anxiety and Depression (HAD) scale
anxiety
depression
mental health
prevalence
risk factors
Model construction and data management of running log in supporting saas software performance analysis
会议论文
作者:
Wang, Rui
;
Ying, Shi
;
Sun, Chengai
;
Wan, Hongyan
;
Zhang, Huolin
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/05
Model construction and data management of running log in supporting saas software performance analysis
期刊论文
Proceedings of the International Conference on Software Engineering and Knowledge Engineering, SEKE, 2017
作者:
Zhang, Huolin
;
Wan, Hongyan
;
Jia, Xiangyang
;
Wang, Rui
;
Sun, Chengai
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/05
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