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CORC

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Suppression of Surface Defects and Vibrational Coupling in GaN by a Graphene Monolayer 期刊论文
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 卷号: 16, 期号: 2, 页码: 2100489
作者:  Zheng, Changcheng;   Ning, Jiqiang;   Ye, Hongang;   Zhang, Lixia;   Xu, Ke;   Zhao, Degang;   Ni, Zhenhua;   Wang, Jiannong;   Xu, Shijie
收藏  |  浏览/下载：23/0  |  提交时间：2022/03/23
Demonstration of N-Polar III-Nitride Tunnel Junction LED 期刊论文
ACS PHOTONICS, 2020, 卷号: 7, 期号: 7, 页码: 1723-1728
作者:  Yuantao Zhang;   Gaoqiang Deng;   Ye Yu;   Yang Wang;   Degang Zhao;   Zhifeng Shi;   Baolin Zhang;   Xiaohang Li
收藏  |  浏览/下载：31/0  |  提交时间：2021/06/28
Spatial Utilization Coordination Features and Development Potential on Ecology-Agriculture-Urban Space of Key Ecological Function Areas: A Case Study of Tacheng Basin, China 期刊论文
POLISH JOURNAL OF ENVIRONMENTAL STUDIES, 2020, 卷号: 29, 期号: 6, 页码: 4361-4370
作者:  Wang, Guiling;  Yang, Degang;  Ye, Lei;  Xiong, Chuanhe
收藏  |  浏览/下载：8/0  |  提交时间：2021/11/15
Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices 期刊论文
Journal of Materials Science: Materials in Electronics, 2019, 卷号: 30, 期号: 4, 页码: 3277-3282
作者:  Gaoqiang Deng;   Yuantao Zhang;   Pengchong Li ;   Ye Yu ;   Xu Han ;   Liang Chen ;   Long Yan ;   Xin Dong ;  Degang Zhao;  Guotong Du
收藏  |  浏览/下载：3/0  |  提交时间：2020/08/04
Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 11, 页码: 9321-9325
作者:  Gaoqiang Deng;  Yuantao Zhang;  Ye Yu;  Long Yan;  Pengchong Li;  Xu Han;  Liang Chen;  Degang Zhao;  Guotong Du
收藏  |  浏览/下载：11/0  |  提交时间：2019/11/19
Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate 期刊论文
Superlattices and Microstructures, 2018, 卷号: 116, 页码: 1-8
作者:  Gaoqiang Deng ;   Yuantao Zhang ;   Ye Yu ;   Long Yan ;   Pengchong Li ;   Xu Han ;   Liang Chen ;   Degang Zhao ;   Guotong Du
收藏  |  浏览/下载：23/0  |  提交时间：2019/11/19
Growth of AlGaN-based multiple quantum wells on SiC substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 9, 页码: 7756-7762
作者:  Xu Han;   Yuantao Zhang;   Pengchong Li ;   Long Yan ;   Gaoqiang Deng ;   Liang Chen ;   Ye Yu ;   Degang Zhao ;   Jingzhi Yin
收藏  |  浏览/下载：16/0  |  提交时间：2019/11/19
Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 74-79
作者:  Gaoqiang Deng ;   Yuantao Zhang ;   Ye Yu ;   Zhen Huang ;   Xu Han ;   Liang Chen ;   Long Yan ;   Pengchong Li ;   Xin Dong ;   Degang Zhao ;   Guotong Du
收藏  |  浏览/下载：15/0  |  提交时间：2019/11/19
Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 15, 页码: 151607
作者:  Gaoqiang Deng;   Yuantao Zhang;   Ye Yu;   Long Yan;   Pengchong Li;   Xu Han;   Liang Chen;   Degang Zhao;   Guotong Du
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/19
The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文
CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337
作者:  Gaoqiang Deng;  Yuantao Zhang;  Zhen Huang;  Long Yan;  Pengchong Li
收藏  |  浏览/下载：18/0  |  提交时间：2018/11/30

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