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Resistive switching model change induced by electroforming in alpha-Fe2O3 films 期刊论文
PHYSICS LETTERS A, 2015, 卷号: 379, 期号: 38, 页码: 2392-2395
作者:  Yan, Xiaobing[1];  Li, Yucheng[2];  Zhao, Jianhui[3];  Xia, Yidong[4];  Zhang, Minglong[5]
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/21
High-k-rare-earth-oxide Eu2O3 films for transparent resistive random access memory (RRAM) devices 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 卷号: 47, 期号: 6
作者:  Zhang, Ting[1];  Ou, Xin[2];  Zhang, Weifeng[3];  Yin, Jiang[4];  Xia, Yidong[5]
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/23
Conduction mechanism of resistance switching in fully transparent MgO-based memory devices 期刊论文
JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 114, 期号: 13
作者:  Zhang, Ting[1];  Yin, Jiang[2];  Xia, Yidong[3];  Zhang, Weifeng[4];  Liu, Zhiguo[5]
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/23
Prospective randomized trial of RFA and chemotherapy for unresectable small hepatocellular carcinoma 期刊论文
Zhonghua zhong liu za zhi [Chinese journal of oncology], 2004, 卷号: 26, 期号: 8
作者:  Gan, Yuhong/7102646648[0];  Yie, Sheng Long/8262486800[1];  Ren, Zhenggang/7402408571[2];  Xia, Jinglin/7402327456[3];  Zhang, Boheng/7406909679[4]
收藏  |  浏览/下载:10/0  |  提交时间:2019/12/27


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