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Effects of interaction between defects on the uniformity of doping HfO-based RRAM: a first principle study 期刊论文
Journal of Semiconductors, 2013, 卷号: Vol.34 No.3
作者:  Yuehua, Dai;  Xiaofeng, Li;  Wei, Zhang;  Ming, Liu;  Maoxiu, Zhou
收藏  |  浏览/下载:6/0  |  提交时间:2019/04/24
DFT  hafnium  oxide  localized  effect  oxygen  vacancy  RRAM  
The conductive path in HfO: first principles study 期刊论文
Journal of Semiconductors, 2012, 卷号: Vol.33 No.7
作者:  Yuehua, Dai;  Wei, Zhang;  Maoxiu, Zhou;  Qi, Liu;  Qiang, Zhao
收藏  |  浏览/下载:1/0  |  提交时间:2019/04/24
Study on the Conductive Filament Formation of HfO2 期刊论文
Advanced Materials Research, 2012, 卷号: Vol.562-564, 页码: 98-101
作者:  Zhou, Maoxiu;  Wu, Xiulong
收藏  |  浏览/下载:1/0  |  提交时间:2019/04/24
Study on the conductive filament formation of HfO2 会议论文
2012 International Conference on Materials Engineering and Automatic Control, ICMEAC 2012, April 27, 2012 - April 29, 2012
作者:  Wu, Xiulong;  Zhou, Maoxiu
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/31


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