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| Cavity Quantum Electrodynamics with Second-Order Topological Corner State 期刊论文 LASER & PHOTONICS REVIEWS, 2020, 卷号: 14, 期号: 8, 页码: 1900425 作者: Xin Xie; Weixuan Zhang; Xiaowu He; Shiyao Wu; Jianchen Dang; Kai Peng; Feilong Song; Longlong Yang; Haiqiao Ni; Zhichuan Niu; Can Wang; Kuijuan Jin; Xiangdong Zhang; Xiulai Xu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:54/0  |  提交时间:2021/06/28 |
| C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence 期刊论文 AIP ADVANCES, 2020, 卷号: 10, 期号: 8, 页码: 085126 作者: Xiangjun Shang; Ben Ma; Haiqiao Ni; Zesheng Chen; Shulun Li; Yao Chen; Xiaowu He; Xingliang Su; Yujun Shi; Zhichuan Niu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:58/0  |  提交时间:2021/06/28 |
| Correlation between exciton polarized lifetime and fine structure splitting in InAs/GaAs quantum dots editors-pick 期刊论文 APPLIED PHYSICS LETTERS, 2020, 卷号: 116, 期号: 8, 页码: 082101 作者: Hao Chen; Zhiyao Zhuo; Junhui Huang; Xiuming Dou; Xiaowu He; Kun Ding; Haiqiao Ni; Zhichuan Niu; Desheng Jiang; Baoquan Sun
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:22/0  |  提交时间:2021/11/05 |
| Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode 期刊论文 NANOSCALE RESEARCH LETTERS, 2020, 卷号: 15, 期号: 1, 页码: 145 作者: Shulun Li; Yao Chen; Xiangjun Shang; Ying Yu; Jiawei Yang; Junhui Huang; Xiangbin Su; Jiaxin Shen; Baoquan Sun; Haiqiao Ni; Xingliang Su; Kaiyou Wang ; Zhichuan Niu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:48/0  |  提交时间:2021/06/28 |
| Plasmon-Field-Induced Metastable States in the Wetting Layer: Detected by the Fluorescence Decay Time of InAs/GaAs Single Quantum Dots 期刊论文 ACS PHOTONICS, 2020, 卷号: 7, 期号: 11, 页码: 3228-3235 作者: Hao Chen; Junhui Huang; Xiaowu He; Kun Ding; Haiqiao Ni; Zhichuan Niu; Desheng Jiang; Xiuming Dou; Baoquan Sun
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:37/0  |  提交时间:2021/05/24 |
| Low-threshold topological nanolasers based on the second-order corner state 期刊论文 LIGHT-SCIENCE & APPLICATIONS, 2020, 卷号: 9, 期号: 1, 页码: 109 作者: Weixuan Zhang; Xin Xie; Huiming Hao; Jianchen Dang; Shan Xiao; Shushu Shi; Haiqiao Ni; Zhichuan Niu; Can Wang; Kuijuan Jin; Xiangdong Zhang ; Xiulai Xu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:29/0  |  提交时间:2021/05/26 |
| Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文 Chinese Physics B, 2019, 卷号: Vol.28 No.2, 页码: 028101 作者: Jing Zhang; Hongliang Lv; Haiqiao Ni; Shizheng Yang; Xiaoran Cui
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:10/0  |  提交时间:2019/12/17 |
| 2.1 μ m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers 期刊论文 Superlattices and Microstructures, 2019, 卷号: 130, 页码: 339-345 作者: Shengwen Xie ; Chengao Yang ; ShuShan Huang ; Ye Yuan ; Yi Zhang ; Jinming Shang ; Chenyuan Cai ; Yu Zhang ; Yingqiang Xu ; Haiqiao Ni ; Zhichuan Niu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:42/0  |  提交时间:2020/07/30 |
| The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy 期刊论文 IEEE Access, 2019, 卷号: 7, 页码: 102710-102716 作者: Jing Zhang; Hongliang Lv; Yifeng Song; Haiqiao Ni; Zhichuan Niu; Yuming Zhang; Senior Member, IEEE
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:35/0  |  提交时间:2020/07/30 |
| Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文 Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101 作者: Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:32/0  |  提交时间:2020/07/30 |