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浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序作者升序作者降序提交时间升序提交时间降序题名升序题名降序 Enhancing light emission efficiency without color change in post-transition metal chalcogenides. 期刊论文 Nanoscale., 2016, 卷号: Vol.8 No.11, 页码: 5820-5825 作者:  Cong Wang;  Shengxue Yang;  Hui Cai;  Can Ataca*;  Hui Chen 收藏  |  浏览/下载：15/0  |  提交时间：2019/02/27 Enhancing light emission efficiency without color change in post-transition metal chalcogenides 期刊论文 nanoscale., 2016, 卷号: 8, 期号: 11, 页码: 5820-5825 Cong Wang; Shengxue Yang; Hui Cai; Can Ataca; Hui Chen; Xinzheng Zhang; Jingjun Xu; Bin Chen; Kedi Wu; Haoran Zhang; Luqi Liu; Jingbo Li; Jeffrey C. Grossman; Sefaattin Tongay; Qian Liu 收藏  |  浏览/下载：32/0  |  提交时间：2017/03/10 Enhancing light emission efficiency without color change in post-transition metal chalcogenides 期刊论文 nanoscale., 2016, 卷号: 8, 期号: 11, 页码: 5820-5825 Cong Wang; Shengxue Yang; Hui Cai; Can Ataca; Hui Chen; Xinzheng Zhang; Jingjun Xu; Bin Chen; Kedi Wu; Haoran Zhang; Luqi Liu; Jingbo Li; Jeffrey C. Grossman; Sefaattin Tongay; Qian Liu 收藏  |  浏览/下载：32/0  |  提交时间：2017/03/10 Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides 期刊论文 ADVANCED MATERIALS, 2016, 卷号: 28, 页码: 7375-7382 作者:  Cai, Hui;  Soignard, Emmanuel;  Ataca, Can;  Chen, Bin;  Ko, Changhyun 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/30 2D materials  band engineering  van der Waals epitaxy   Enhancing light emission efficiency without color change in post-transition metal chalcogenides 期刊论文 NANOSCALE, 2016, 卷号: 8, 页码: 5820-5825 作者:  Wang, Cong;  Yang, Shengxue;  Cai, Hui;  Ataca, Can;  Chen, Hui 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating 期刊论文 nano letters, 2013, 卷号: 13, 期号: 6, 页码: 2831-2836 Tongay, Sefaattin; Zhou, Jian; Ataca, Can; Liu, Jonathan; Kang, Jeong Seuk; Matthews, Tyler S.; You, Long; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao 收藏  |  浏览/下载：20/0  |  提交时间：2014/04/30 Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2 期刊论文 nano letters, 2012, 卷号: 12, 期号: 11, 页码: 5576-5580 Tongay, Sefaattin; Zhou, Jian; Ataca, Can; Lo, Kelvin; Matthews, Tyler S; Li, Jingbo; Grossman, Jeffrey C; Wu, Junqiao 收藏  |  浏览/下载：23/0  |  提交时间：2013/04/23 Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2 期刊论文 nano letters, 2012, 卷号: 12, 期号: 11, 页码: 5576-5580 Tongay S (Tongay, Sefaattin); Zhou J (Zhou, Jian); Ataca C (Ataca, Can); Lo K (Lo, Kelvin); Matthews TS (Matthews, Tyler S.); Li JB (Li, Jingbo); Grossman JC (Grossman, Jeffrey C.); Wu JQ (Wu, Junqiao) 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/26