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| Cavity Quantum Electrodynamics with Second-Order Topological Corner State 期刊论文
LASER & PHOTONICS REVIEWS, 2020, 卷号: 14, 期号: 8, 页码: 1900425
作者: Xin Xie; Weixuan Zhang; Xiaowu He; Shiyao Wu; Jianchen Dang; Kai Peng; Feilong Song; Longlong Yang; Haiqiao Ni; Zhichuan Niu; Can Wang; Kuijuan Jin; Xiangdong Zhang; Xiulai Xu
  收藏 | 浏览/下载：44/0 | 提交时间：2021/06/28 |
| C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence 期刊论文
AIP ADVANCES, 2020, 卷号: 10, 期号: 8, 页码: 085126
作者: Xiangjun Shang; Ben Ma; Haiqiao Ni; Zesheng Chen; Shulun Li; Yao Chen; Xiaowu He; Xingliang Su; Yujun Shi; Zhichuan Niu
收藏 | 浏览/下载：53/0 | 提交时间：2021/06/28 |
| Correlation between exciton polarized lifetime and fine structure splitting in InAs/GaAs quantum dots editors-pick 期刊论文
APPLIED PHYSICS LETTERS, 2020, 卷号: 116, 期号: 8, 页码: 082101
作者: Hao Chen; Zhiyao Zhuo; Junhui Huang; Xiuming Dou; Xiaowu He; Kun Ding; Haiqiao Ni; Zhichuan Niu; Desheng Jiang; Baoquan Sun
收藏 | 浏览/下载：16/0 | 提交时间：2021/11/05 |
| Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode 期刊论文
NANOSCALE RESEARCH LETTERS, 2020, 卷号: 15, 期号: 1, 页码: 145
作者: Shulun Li; Yao Chen; Xiangjun Shang; Ying Yu; Jiawei Yang; Junhui Huang; Xiangbin Su; Jiaxin Shen; Baoquan Sun; Haiqiao Ni; Xingliang Su; Kaiyou Wang ; Zhichuan Niu
收藏 | 浏览/下载：39/0 | 提交时间：2021/06/28 |
| Plasmon-Field-Induced Metastable States in the Wetting Layer: Detected by the Fluorescence Decay Time of InAs/GaAs Single Quantum Dots 期刊论文
ACS PHOTONICS, 2020, 卷号: 7, 期号: 11, 页码: 3228-3235
作者: Hao Chen; Junhui Huang; Xiaowu He; Kun Ding; Haiqiao Ni; Zhichuan Niu; Desheng Jiang; Xiuming Dou; Baoquan Sun
收藏 | 浏览/下载：30/0 | 提交时间：2021/05/24 |
| Low-threshold topological nanolasers based on the second-order corner state 期刊论文
LIGHT-SCIENCE & APPLICATIONS, 2020, 卷号: 9, 期号: 1, 页码: 109
作者: Weixuan Zhang; Xin Xie; Huiming Hao; Jianchen Dang; Shan Xiao; Shushu Shi; Haiqiao Ni; Zhichuan Niu; Can Wang; Kuijuan Jin; Xiangdong Zhang ; Xiulai Xu
收藏 | 浏览/下载：23/0 | 提交时间：2021/05/26 |
| Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: Vol.28 No.2, 页码: 028101
作者: Jing Zhang; Hongliang Lv; Haiqiao Ni; Shizheng Yang; Xiaoran Cui
收藏 | 浏览/下载：10/0 | 提交时间：2019/12/17 |
| 2.1 μ m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers 期刊论文
Superlattices and Microstructures, 2019, 卷号: 130, 页码: 339-345
作者: Shengwen Xie ; Chengao Yang ; ShuShan Huang ; Ye Yuan ; Yi Zhang ; Jinming Shang ; Chenyuan Cai ; Yu Zhang ; Yingqiang Xu ; Haiqiao Ni ; Zhichuan Niu
收藏 | 浏览/下载：36/0 | 提交时间：2020/07/30 |
| The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy 期刊论文
IEEE Access, 2019, 卷号: 7, 页码: 102710-102716
作者: Jing Zhang; Hongliang Lv; Yifeng Song; Haiqiao Ni; Zhichuan Niu; Yuming Zhang; Senior Member, IEEE
收藏 | 浏览/下载：29/0 | 提交时间：2020/07/30 |
| Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101
作者: Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang
收藏 | 浏览/下载：24/0 | 提交时间：2020/07/30 |
