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A world-class source rock in southern China formed during the periods from Katian to Rhuddanian: Biostratigraphic distribution, depositional model and shale gas potential 期刊论文
GONDWANA RESEARCH, 2024, 卷号: 126, 页码: 267-288
作者:  Nie, Haikuan;  Li, Pei;  Chen, Qing;  Jin, Zhijun;  Liu, Quanyou
收藏  |  浏览/下载:13/0  |  提交时间:2024/03/14
Assessing effects of sulfate minerals on petroleum generation in sedimentary basins using hydrous pyrolysis: I. Light alkanes 期刊论文
Marine and Petroleum Geology, 2019, 卷号: 110, 页码: 737-746
作者:  Chen, X.;  Liu, Quanyou;  Meng, Qingqiang;  Zhu, Dongya;  Liu, Wenhui
收藏  |  浏览/下载:13/0  |  提交时间:2019/12/11
Improved measurement of the reactor antineutrino flux and spectrum at Daya Bay Improved measurement of the reactor antineutrino flux and spectrum at Daya Bay 期刊论文
2017, 卷号: 41, 页码: 11-46
作者:  安丰鹏[1];  A.B.Balantekin[2];  H.R.Band[3];  M.Bishai[4];  S.Blyth[5,6]
收藏  |  浏览/下载:54/0  |  提交时间:2019/11/30
一种提高汽车制动凸轮轴耐磨性的装置与方法 专利
申请日期: 2017-01-01, 公开日期: 2018-02-16
作者:  任旭东[1];  陈炳泉[2];  金成嘉[3];  石佑敏[4];  王日红[5]
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/24
Clinical outcomes and cost analysis for unilateral versus bilateral pedicle screw fixation in two levels during minimally invasive transforaminal lumbar interbody fusion (MIS-TLIF): a comparative analysis 期刊论文
INTERNATIONAL JOURNAL OF CLINICAL AND EXPERIMENTAL MEDICINE, 2016, 卷号: 9, 页码: 11566-11573
作者:  Han, Kang;  Gao, Quanyou;  Gao, Haoran;  Lu, Yao;  Bian, Na
收藏  |  浏览/下载:13/0  |  提交时间:2019/11/26
Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 卷号: 121, 期号: 3, 页码: 1271-1276
作者:  Zhao, Jingtao;  Lin, Zhaojun;  Chen, Quanyou;  Yang, Ming;  Cui, Peng
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/17
A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 79, 页码: 21-28
作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/17
A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2015, 卷号: 107, 期号: 11
作者:  Zhao, Jingtao;  Lin, Zhaojun;  Chen, Quanyou;  Yang, Ming;  Cui, Peng
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/17
A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Superlattices and microstructures, 2015, 页码: 21-28
作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/17
A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Applied physics letters, 2015, 期号: 11, 页码: 113502-1-113502-5
作者:  Zhao, Jingtao;  Lin, Zhaojun;  Chen, Quanyou;  Yang, Ming;  Cui, Peng
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/17


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