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浏览/检索结果: 共7条，第1-7条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD 期刊论文 IEEE SENSORS JOURNAL, 2022, 卷号: 22 作者:  Zhang, Lilong;  Wang, Ying;  Guo, Haomin;  Yu, Chenghao;  Hu, Haifan 收藏  |  浏览/下载：15/0  |  提交时间：2022/12/23 Neutron detector  silicon carbide  transient current  charge collection  SRIM and TCAD   Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 页码: 710-715 作者:  Shu, Lei;  Wang, Liang;  Zhou, Xin;  Li, Tong-De;  Yuan, Zhang-Yi'an 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)  BVDS variations  laterally diffused metal-oxide-semiconductor (LDMOS)  radiation effects  SOI  technology computer-aided design (TCAD) simulations  total ionizing dose (TID)   Impact of random discrete dopant in extension induced fluctuation in gate-source/drain underlap FinFET 期刊论文 日本应用物理学杂志, 2014 Wang, Yijiao; Huang, Peng; Xin, Zheng; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/10 DRIFT-DIFFUSION SIMULATIONS  K SPACER  OPTIMIZATION  PERFORMANCE  DESIGN   Impact of random discrete dopant in extension induced fluctuation in gate-source/drain underlap FinFET 其他 2014-01-01 Wang, Yijiao; Huang, Peng; Xin, Zheng; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal-Oxide-Semiconductor Field-Effect Transistors 期刊论文 日本应用物理学杂志, 2013 Wei, Kang Liang; Liu, Xiao Yan; Du, Gang 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 DRIFT-DIFFUSION SIMULATIONS  MONTE-CARLO-SIMULATION  MOSFETS  ATOMS  FLUCTUATION   Impact of Junction nonabruptness on random-discrete-dopant induced variability in intrinsic channel trigate metal-oxide-semiconductor field-effect transistors 其他 2013-01-01 Wei, Kang Liang; Liu, Xiao Yan; Du, Gang 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs 期刊论文 ieee 纳米技术汇刊, 2011 Yang, Yunxiang; Yu, Shimeng; Zeng, Lang; Du, Gang; Kang, Jinfeng; Zhao, Yuning; Han, Ruqi; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Dopant-segregated Schottky MOSFETs (DSS-MOSFETs)  line edge roughness (LER)  Schottky barrier (SB)  technology computer-aided design (TCAD) simulation  variations  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  BARRIER  DECANANOMETER  IMPACT