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	High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Wang X.; Li Z.; Liu Y.; Wang Y.; Yao D.; Wang L. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle the average driving power in the laser chip is quite low so the heating effect cemiconductor laser is very small using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.
	GaN基蓝紫光激光器制备的理论与关键技术的研究学位论文 2008, 2008 尹以安收藏 \| 浏览/下载：3/0 \| 提交时间：2016/02/14 GaN基蓝紫光激光器 MOCVD AlGaN InGaN/GaN多量子阱 p-InGaN/p-AlGaN超晶格应变补偿应变极化效应 P型欧姆接触。 GaN base bule-violet laser diode LP-MOCVD AlGaN InGaN/GaN MQW p-InGaN/p-AlGaN SLS strained-compensated effect strain-induced piezoelectric effect p-type ohmic contact
	Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y 会议论文 conference on optoelectronic materials and devices ii, wuhan, peoples r china, nov 02-05, 2007 作者: Pan JQ 收藏 \| 浏览/下载：46/0 \| 提交时间：2010/03/09 butt joint
	Multiple GaInNAs quantum wells for high power applications 专利专利号: US20060039432A1, 申请日期: 2006-02-23, 公开日期: 2006-02-23 作者: HA, WONILL; GAMBIN, VINCENT; HARRIS, JAMES S. 收藏 \| 浏览/下载：6/0 \| 提交时间：2020/01/18
	High power output and temperature characteristics of 1.06m diode array module (EI CONFERENCE) 会议论文 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China Yao S.; Tao G.; Lu G.; Liu Y.; Zhang B.; Yao D.; Wang L. 收藏 \| 浏览/下载：59/0 \| 提交时间：2013/03/25 In this paper high power diode array module with an emission wavelength of 1.06m is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% arc processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20C to 40C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20C. The central wavelength is 1059.4nm.
	Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 1-2, 页码: 96-102 Lei, HP; Wu, HZ; Lao, YF; Qi, M; Li, AZ; Shen, WZ 收藏 \| 浏览/下载：19/0 \| 提交时间：2012/03/24 MOLECULAR-BEAM EPITAXY QUANTUM-WELLS LASER-DIODES TEMPERATURE-DEPENDENCE BAND-STRUCTURE PHOTOLUMINESCENCE GROWTH SEMICONDUCTORS POWER
	GSMBE growth of compressively strained and strain-compensated InAsP/InGaAsP quantum wells for 1.3 mu m wavelength lasers 期刊论文 COMPOUND SEMICONDUCTORS 1999, 2000, 期号: 166, 页码: 63-66 Chen, JX; Li, AZ; Chen, YQ; Zhang, YG(张永刚）; Qi, M; Lin, XR; Frojdh, K; Stoltz, B 收藏 \| 浏览/下载：13/0 \| 提交时间：2012/03/24
	A novel 1.3-mu m high t-0 algainas/inp strained-compensated multi-quantum well complex-coupled distributed feedback laser diode 期刊论文 Japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 9a, 页码: 5096-5100 作者: Chen, B; Wang, W; Wang, XJ; Zhang, JY; Fan, Z 收藏 \| 浏览/下载：22/0 \| 提交时间：2019/05/12 Fiber communication Algainas/inp Distributed feedback laser diodes Complex-coupled grating Strained-compensated Lp-mocvd
	A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode 期刊论文 japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 9a, 页码: 5096-5100 Chen B; Wang W; Wang XJ; Zhang JY; Fan Z 收藏 \| 浏览/下载：70/0 \| 提交时间：2010/08/12 fiber communication AlGaInAs/InP distributed feedback laser diodes complex-coupled grating strained-compensated LP-MOCVD TEMPERATURE
	Semiconductor laser and manufacturing method of the same 专利专利号: US5496767, 申请日期: 1996-03-05, 公开日期: 1996-03-05 作者: YOSHIDA, ICHIRO 收藏 \| 浏览/下载：11/0 \| 提交时间：2019/12/24

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