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浏览/检索结果: 共1条，第1-1条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China Liu K.; Shen D.; Zhang J.; Lu Y.; Jiang D.; Zhao Y.; Li B.; Zhao D.; Zhang Z.; Yao B. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 In recent years  ZnMgO semiconductor alloys  with a direct bandgap tunable between 3.37 eV and 7.8 eV  become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper  we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m  5 m and 10 m  respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current  spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch  the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore  the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns  170 ns and 230 ns for the devices with different finger pitches of 2 m  5 m and 10 m  respectively..