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CORC

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Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT 期刊论文
SOLID-STATE ELECTRONICS, 2021, 卷号: 175, 期号: 1, 页码: 1-7
作者:  Yang, GG (Yang, Guangan)[ 1 ];  Wu, WR (Wu, Wangran)[ 1 ];  Zhang, XY (Zhang, Xingyao)[ 2 ];  Tang, PY (Tang, Pengyu)[ 1 ];  Yang, J (Yang, Jing)[ 1 ]
收藏  |  浏览/下载：35/0  |  提交时间：2021/03/15
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：79/0  |  提交时间：2019/11/10
Single-ended line protection for MMC-MTDC grids 期刊论文
IET GENERATION TRANSMISSION & DISTRIBUTION, 2019, 卷号: 13, 期号: 19, 页码: 4331-4338
作者:  Zhang, Shuo;  Zou, Guibin;  Huang, Qiang;  Xu, Bin;  Li, Jun
收藏  |  浏览/下载：25/0  |  提交时间：2019/12/11
Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 430, 页码: 59-63
作者:  Hu, P. P.;  Liu, J.;  Zhang, S. X.;  Maaz, K.;  Zeng, J.
收藏  |  浏览/下载：27/0  |  提交时间：2018/10/08
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
作者:  Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ]
收藏  |  浏览/下载：37/0  |  提交时间：2018/09/18
ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 1
作者:  Wang, Fengyun;  Song, Longfei;  Zhang, Hongchao;  Meng, You;  Luo, Linqu
收藏  |  浏览/下载：38/0  |  提交时间：2018/04/02
Modification of lubricant infused porous surface for low-voltage reversible electrowetting 期刊论文
Journal of Materials Chemistry A, 2017, 卷号: 5, 期号: 36, 页码: 19159-19167
作者:  He, Xiaodong;  Qiang, Wenbin;  Du, Chao;  Shao, Qunfeng;  Zhang XP(张晓萍)
收藏  |  浏览/下载：30/0  |  提交时间：2017/11/24
The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics 期刊论文
SOLID-STATE ELECTRONICS, 2017, 卷号: 133, 页码: 6-9
作者:  Wang, Ruo Zheng;  Wu, Sheng Li;  Li, Xin Yu;  Zhang, Jin Tao
收藏  |  浏览/下载：3/0  |  提交时间：2019/11/26
Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhou, Xiaoliang; Shao, Yang; Zhang, Letao; Xiao, Xiang; Han, Dedong; Wang, Yi; Zhang, Shengdong
收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03
Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhang, Letao; Zhou, Xiaoliang; Yang, Huan; He, Hongyu; Wang, Longyan; Zhang, Min; Zhang, Shengdong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03

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