CORC

在结果中检索

CORC

浏览/检索结果: 共44条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 5
作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors 期刊论文
Applied Physics A: Materials Science and Processing, 2018, 卷号: 124, 期号: 5
作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017
Zhang, Letao; Zhou, Xiaoliang; Chang, Baozhu; Wang, Longyan; Xiao, Yuxiang; He, Hongyu; Zhang, Shengdong
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhang, Letao; Zhou, Xiaoliang; Yang, Huan; He, Hongyu; Wang, Longyan; Zhang, Min; Zhang, Shengdong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 3, 页码: 1038-1044
作者:  Cui, Peng;  Liu, Huan;  Lin, Wei;  Lin, Zhaojun;  Cheng, Aijie
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9
作者:  Liu, Yan;  Lin, Zhao-Jun;  Lv, Yuan-Jie;  Cui, Peng;  Fu, Chen
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Chinese Physics B, 2017, 期号: 09, 页码: 393-399
作者:  Liu Y(刘艳);  Lin ZJ(林兆军);  Lv YJ(吕元杰);  Cui P(崔鹏);  Fu C(付晨)
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/12
FOI FinFET with Ultra-low Parasitic Resistance Enabled by Fully Metallic Source and Drain Formation on Isolated Bulk-Fin 会议论文
作者:  Wu ZH(吴振华);  Luo J(罗军);  Meng LK(孟令款);  Zhang QZ(张青竹);  Li YD(李昱东)
收藏  |  浏览/下载：32/0  |  提交时间：2017/05/19
Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts 期刊论文
ELECTRONICS LETTERS, 2016
Zhang, Yi; Han, Dedong; Huang, Lingling; Dong, Junchen; Cong, Yingying; Cui, Guodong; Zhang, Xiaomi; Zhang, Xing; Zhang, Shengdong; Wang, Yi
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 4, 页码: 1471-1477
作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Cui, Peng;  Fu, Chen
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/16

©版权所有 ©2017 CSpace - Powered by CSpace