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科研机构
北京大学 [16]
大连化学物理研究所 [1]
武汉物理与数学研究所 [1]
华南理工大学 [1]
云南天文台 [1]
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期刊论文 [11]
其他 [8]
会议论文 [1]
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2017 [2]
2013 [2]
2011 [1]
2009 [2]
2008 [4]
2007 [3]
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Effects of naturally occurring charged mutations on the structure, stability, and binding of the Pin1 WW domain
期刊论文
BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS, 2017, 卷号: 487, 期号: 2, 页码: 470-476
作者:
Qiao, Xiaoya
;
Zhao, Caixian
;
Ai, Xuanjun
;
Chen, Lei
;
Luo, Liting
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2017/11/24
Pin1 Ww Domain
Naturally Occurring Mutant
Charge Mutation
Phosphorylated Tau
Nmr Spectroscopy
Alzheimer's Disease
Effects of naturally occurring charged mutations on the structure, stability, and binding of the Pin1 WW domain
期刊论文
BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS, 2017, 卷号: 487, 页码: 470-476
作者:
Qiao, Xiaoya
;
Liu, Ying
;
Luo, Liting
;
Chen, Lei
;
Zhao, Caixian
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2017/10/29
Pin1 Ww Domain
Naturally Occurring Mutant
Charge Mutation
Phosphorylated Tau
Nmr Spectroscopy
Alzheimer's Disease
NON-EQUILIBRIUM IONIZATION MODELING OF THE CURRENT SHEET IN A SIMULATED SOLAR ERUPTION
期刊论文
ASTROPHYSICAL JOURNAL, 2013, 卷号: 773, 期号: 2
作者:
Shen CC(沈呈彩)
;
Reeves, KK
;
Raymond, JC
;
Murphy, NA
;
Ko, YK
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2016/04/08
atomic processes
magnetic reconnection
Sun: coronal mass ejections (CMEs)
Sun: UV radiation
Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs
期刊论文
journal of computational and theoretical nanoscience, 2013
He, Jin
;
Zhou, Zhize
;
Yu, Cao
;
He, Lin
;
Ye, Yun
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/16
MOSFET Device
Integrated Circuit
Short-Channel Effect
Compact Modeling
SHORT-CHANNEL MOSFETS
DESIGN
PERFORMANCE
TRANSISTORS
A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors
期刊论文
journal of computational and theoretical nanoscience, 2011
Zhang, Xukai
;
He, Jin
;
Zhang, Lining
;
Zhang, Jian
;
Ma, Yong
;
Wu, Wen
;
Wang, Wenping
;
Wang, Ruonan
;
Gu, Xin
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
Bulk MOSFET Limit
Non-Classical CMOS
Double-Gate MOSFET
Device Physics
Surface Potential-Based Model
MOSFETS
DEVICE
A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs
其他
2009-01-01
He, Jin
;
Zhang, Lining
;
Zhang, Jian
;
Ma, Chenyue
;
Liu, Feilong
;
Chan, Mansun
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
non-classical MOS transistor
surrounding-gate MOSFETs
device physics
surface potential model
non-charge-sheet approximation
MOS-TRANSISTOR
CHARGE
PERFORMANCE
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
期刊论文
journal of semiconductors, 2009
He, Jin
;
Zhang, Jian
;
Zhang, Lining
;
Ma, Chenyue
;
Chan, Mansun
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/16
A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes
期刊论文
ieee电子器件汇刊, 2008
Liu, Feng
;
He, Jin
;
Zhang, Jian
;
Chen, Yu
;
Chan, Mansun
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
Compact model
double-gate (DG) MOSFET
fully depleted (FD)
non-charge-sheet current
partially depleted (PD)
SOI MOSFETS
COMPACT MODEL
POTENTIAL MODEL
DRAIN CURRENT
TRANSISTORS
DESIGN
INVERSION
VOLTAGE
DEVICE
A Complete Surface Potential-Based Current-Voltage and Capacitance-Voltage Core Model for Undoped Surrounding-Gate MOSFETs
其他
2008-01-01
He, Jin
;
Song, Yan
;
Liu, Feng
;
Liu, Feilong
;
Zhang, Lining
;
Zhang, Jian
;
Zhang, Xing
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/12
non-classical MOSFET
surrounding-gate MOSFETs
device physics
surface potential model
non-charge-sheet approximation
A Complete Surface Potential-Based Current-Voltage and Capacitance-Voltage Core Model for Undoped Surrounding-Gate MOSFETs
其他
2008-01-01
Jin He
;
Yan Song
;
Feng Liu
;
Feilong Liu
;
Lining Zhang
;
Jian Zhang
;
Xing Zhang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
non-classical MOSFET
surrounding-gate MOSFETs
device physics
surface potential model
non-charge-sheet approximation
non-classical MOSFET
surrounding-gate MOSFETs
device physics
surface potential model
non-charge-sheet approximation
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