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北京大学 [4]
上海硅酸盐研究所 [4]
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Domain-wall induced giant tunneling electroresistance effect in two-dimensional Graphene/In2Se3 ferroelectric tunnel junctions
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2021, 卷号: 133
作者:
Kang, Lili
;
Jiang, Peng
;
Zhang, Xiaoli
;
Hao, Hua
;
Zheng, Xiaohong
收藏
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浏览/下载:36/0
  |  
提交时间:2021/08/31
Ferroelectric tunnel junctions
Tunneling electroresistance effect
Domain walls
Quantum transport
First principles
The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures
期刊论文
IEEE DESIGN & TEST, 2020, 卷号: 37, 期号: 1, 页码: 79-99
作者:
Chen, Xiaoming
;
Sun, Xiaoyu
;
Wang, Panni
;
Datta, Suman
;
Hu, Xiaobo Sharon
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2020/12/10
Iron
Transistors
Computer architecture
Switches
Capacitance
Logic gates
Computational modeling
Ferroelectric Field Effect Transistor
FeFET
Negative Capacitance Field Effect Transistor
NCFET
Preisach model
FPGAs
content addressable memories
CAM
TCAM
compute-in-memory
analog synapse
Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 45, 页码: 42358-42364
作者:
Yan, Shili
;
Huang, Hai
;
Xie, Zhijian
;
Ye, Guojun
;
Li, Xiao-Xi
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  |  
浏览/下载:16/0
  |  
提交时间:2021/02/02
black phosphorus
P(VDF-TrFE)
nonvolatile ferroelectric memories
field-effect transistors (FETs)
anti-hysteresis
Effects of barium substitution on the optical and electrical properties of PLZT transparent electro-optical ceramics
期刊论文
CERAMICS INTERNATIONAL, 2019, 卷号: 45, 期号: 14, 页码: 17890
作者:
Xu, Zhewei
;
Zeng, Xia
;
Cao, Zhaodong
;
Ling, Liang
;
Qiu, Pingsun
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  |  
浏览/下载:50/0
  |  
提交时间:2019/12/26
PLZT
Dielectric properties
Ferroelectric properties
Optical properties
Electro-optic properties
Hot pressing
Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 7
作者:
Xu, Meng
;
Yan, Jian-Min
;
Chen, Ting-Wei
;
Xu, Zhi-Xue
;
Wang, Hui
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  |  
浏览/下载:70/0
  |  
提交时间:2019/12/26
electrical properties
ferroelectric field effect
ionic liquids
oxide semiconductors
PMN-PT single crystals
Power and Area Efficient FPGA Building Blocks Based on Ferroelectric FETs
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 期号: 5, 页码: 1780-1793
作者:
Chen, Xiaoming
;
Ni, Kai
;
Niemier, Michael T.
;
Han, Yinhe
;
Datta, Suman
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  |  
浏览/下载:61/0
  |  
提交时间:2019/08/16
Ferroelectric field-effect transistor (FeFET)
field-programmable gate array (FPGA)
lookup table (LUT)
routing switch
Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172
作者:
Chen, Xiaoming
;
Niemier, Michael
;
Hu, Xiaobo Sharon
;
Yin, Xunzhao
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  |  
浏览/下载:70/0
  |  
提交时间:2019/04/03
Ferroelectric FET (FeFET)
logic-in-memory (LiM)
nonvolatile (NV) memory
Multimechanism Synergistic Photodetectors with Ultrabroad Spectrum Response from 375 nm to 10 mu m
期刊论文
ADVANCED SCIENCE, 2019, 卷号: 6, 期号: 15, 页码: 1901050
作者:
Wang Xudong
;
Shen Hong
;
Chen Yan
;
Wu Guangjian
;
Wang Peng
收藏
  |  
浏览/下载:91/0
  |  
提交时间:2019/11/13
2D materials
ferroelectric
infrared detectors
pyroelectric
ultrabroad spectrum response
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3
期刊论文
NANO LETTERS, 2018, 卷号: 18, 期号: 2, 页码: 1253-1258
作者:
Cui, CJ
;
Hu, WJ
;
Yan, XG
;
Addiego, C
;
Gao, WP
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2018/06/05
Thin-films
Phase-transformation
Alpha-in2se3
Piezoelectricity
Temperature
Discovery
Crystal
Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 38, 页码: 32809, 32817
作者:
Xu, Zhi-Xue
;
Yan, Jian-Min
;
Xu, Meng
;
Guo, Lei
;
Chen, Ting -Wei
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  |  
浏览/下载:50/0
  |  
提交时间:2018/12/28
ferroelectric field effect device
ferroelectric single crystal
electronic properties
tin dioxide thin film
magnetoresistance
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