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长春光学精密机械与物... [1]
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会议论文 [1]
发表日期
2005 [1]
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Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE)
会议论文
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
He C.-F.
;
Lu G.-G.
;
Shan X.-N.
;
Sun Y.-F.
;
Li T.
;
Qin L.
;
Yan C.-L.
;
Ning Y.-Q.
;
Wang L.-J.
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浏览/下载:15/0
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提交时间:2013/03/25
By using bottom-emitting structure
we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well
single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron
heavy and light holes. According to the transition selection rule
we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells
we calculated the gain of VECSEL using transition matrix elements of electron
heavy and light holes. We give out the threshold gain
output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror
active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.
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