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浏览/检索结果: 共2条，第1-2条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures 期刊论文 IEEE DESIGN & TEST, 2020, 卷号: 37, 期号: 1, 页码: 79-99 作者:  Chen, Xiaoming;  Sun, Xiaoyu;  Wang, Panni;  Datta, Suman;  Hu, Xiaobo Sharon 收藏  |  浏览/下载：17/0  |  提交时间：2020/12/10 Iron  Transistors  Computer architecture  Switches  Capacitance  Logic gates  Computational modeling  Ferroelectric Field Effect Transistor  FeFET  Negative Capacitance Field Effect Transistor  NCFET  Preisach model  FPGAs  content addressable memories  CAM  TCAM  compute-in-memory  analog synapse   Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 17, 页码: art.no.173507 Zhao J (Zhao, Jianzhi); Lin Z (Lin, Zhaojun); Corrigan TD (Corrigan, Timothy D.); Wang Z (Wang, Zhen); You Z (You, Zhidong); Wang Z (Wang, Zhanguo) 收藏  |  浏览/下载：62/0  |  提交时间：2010/03/29 FIELD-EFFECT TRANSISTORS