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Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor
期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2022, 页码: 7
作者:
Zhang, Tongyao
;
Zhao, Siwen
;
Wang, Anran
;
Xiong, Zhiren
;
Liu, Yingjia
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  |  
浏览/下载:25/0
  |  
提交时间:2022/07/14
heterostructures
transition metal dichalcogenides
two-dimensional ferromagnetic semiconductors
valley polarization
Ultrafast growth of submillimeter-scale single-crystal MoSe2 by pre-alloying CVD
期刊论文
NANOSCALE HORIZONS, 2022, 页码: 9
作者:
Xin, Xing
;
Chen, Jiamei
;
Zhang, Yanmei
;
Chen, Mao-Lin
;
Bao, Youzhe
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  |  
浏览/下载:23/0
  |  
提交时间:2022/07/01
Effects of substrate on swift heavy ion irradiation induced defect engineering in MoSe2
期刊论文
MATERIALS CHEMISTRY AND PHYSICS, 2022, 卷号: 277, 页码: 6
作者:
Zhang, S. X.
;
Zeng, J.
;
Hu, P. P.
;
Xu, L. J.
;
Maaz, K.
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  |  
浏览/下载:20/0
  |  
提交时间:2022/04/11
Swift heavy ion irradiation
MoSe2
Substrate
Defect engineering
Vibrational mode
Temperature-dependent optical constants of monolayer MoS2, MoSe2, WS2, and WSe2: spectroscopic ellipsometry and first-principles calculations
期刊论文
SCIENTIFIC REPORTS, 2020, 卷号: 10, 期号: 1, 页码: 11
作者:
Liu, Hsiang-Lin
;
Yang, Teng
;
Chen, Jyun-Han
;
Chen, Hsiao-Wen
;
Guo, Huaihong
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  |  
浏览/下载:16/0
  |  
提交时间:2021/02/02
Evolutions of morphology and electronic properties of few-layered MoS2 exposed to UVO
期刊论文
RESULTS IN PHYSICS, 2020, 卷号: 19, 页码: -
作者:
Liu, JX
;
Sun, KL
;
Zheng, XM
;
Wang, ST
;
Lian, SC
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  |  
浏览/下载:45/0
  |  
提交时间:2021/09/06
TRANSITION-METAL DICHALCOGENIDES
MONOLAYER MOS2
PHOTOLUMINESCENCE
TRANSISTORS
BULK
WSE2
Simultaneous Surface-Enhanced Resonant Raman and Fluorescence Spectroscopy of Monolayer MoSe2: Determination of Ultrafast Decay Rates in Nanometer Dimension
期刊论文
NANO LETTERS, 2019, 卷号: 19, 期号: 9
作者:
Zhang, Yexin
;
Chen, Wen
;
Fu, Tong
;
Sun, Jiawei
;
Zhang, Daxiao
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  |  
浏览/下载:2/0
  |  
提交时间:2019/12/05
Surface-enhanced Raman scattering
surface-enhanced fluorescence
plasmonic nanocavity
light-matter interaction
transition metal dichalcogenides
total decay rate
Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface
期刊论文
Acs Applied Materials & Interfaces, 2019, 卷号: 11, 期号: 35, 页码: 31851-31859
作者:
Y.P.Song
;
B.Yao
;
Y.F.Li
;
Z.H.Ding
;
H.H.Sun
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  |  
浏览/下载:4/0
  |  
提交时间:2020/08/24
Cu2ZnSn(S,Se)(4),solar cells,back surface field,p-MoSe2:Nb,carrier,recombination,shunt resistance,series resistance,recombination,resistance,monolayer,contact,mos2,bsf,Science & Technology - Other Topics,Materials Science
Ar2+ Beam Irradiation-Induced Multivancancies in MoSe2 Nanosheet for Enhanced Electrochemical Hydrogen Evolution
期刊论文
ACS ENERGY LETTERS, 2018, 卷号: 3, 页码: 2167-2172
作者:
Li, Jun
;
Xia, Baorui
;
Wang, Tongtong
;
Jiang, Xingdong
;
Zhang, Tongmin
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  |  
浏览/下载:94/0
  |  
提交时间:2018/10/08
A general method for the chemical synthesis of large-scale, seamless transition metal dichalcogenide electronics
期刊论文
Advanced materials, 2018, 卷号: 30, 期号: 12, 页码: 9
作者:
Li, Li
;
Guo, Yichuan
;
Sun, Yuping
;
Yang, Long
;
Qin, Liang
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  |  
浏览/下载:135/0
  |  
提交时间:2019/04/23
Carbon nanotubes
Chemical vapor deposition
Flexible electronics
Heterostructures
Transition metal dichalcogenides
Stability of direct band gap under mechanical strains for monolayer MoS2, MoSe2, WS2 and WSe2
期刊论文
Physica E: Low-Dimensional Systems and Nanostructures, 2018, 卷号: 101, 页码: 44-49
作者:
Deng, Shuo
;
Li, Lijie*
;
Li, Min
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  |  
浏览/下载:3/0
  |  
提交时间:2019/12/04
2D materials
Direct band gap
Elastic properties
First principles
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