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Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga
2
O
3
power diodes
期刊论文
APPLIED PHYSICS LETTERS, 2023, 卷号: 123
作者:
Liu, Jinyang
;
Han, Zhao
;
Ren, Lei
;
Yang, Xiao
;
Xu, Guangwei
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2023/11/10
A SiC asymmetric cell trench MOSFET with a split gate and integrated p(+)-poly Si/SiC heterojunction freewheeling diode
期刊论文
CHINESE PHYSICS B, 2023, 卷号: 32, 期号: 5, 页码: 8
作者:
Jiang, Kaizhe
;
Zhang, Xiaodong
;
Tian, Chuan
;
Zhang, Shengrong
;
Zheng, Liqiang
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2023/10/07
split gate (SG)
heterojunction freewheeling diode (HJD)
SiC asymmetric cell trench MOSFET
turn-on loss
turn-off loss
A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
期刊论文
JOURNAL OF COMPUTATIONAL PHYSICS, 2022, 卷号: 458, 页码: 24
作者:
Zhang, Qianru
;
Wang, Qin
;
Zhang, Linbo
;
Lu, Benzhuo
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2023/02/07
Three-dimensional drift -diffusion model
Averaging technique
Finite element method
Semiconductor device
Effect of charge coupling on breakdown voltage of high voltage trench-gate-type super barrier rectifier
期刊论文
ACTA PHYSICA SINICA, 2021, 卷号: 70
作者:
Xu Da-Lin
;
Wang Yu-Qi
;
Li Xin-Hua
;
Shi Tong-Fei
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2021/04/26
trench-gate-type super barrier rectifier
charge coupling
breakdown voltage
stepped oxide
A MOSFET-based high voltage nanosecond pulse module for the gating of proximity-focused microchannel plate image-intensifier
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2021, 卷号: 987
作者:
Fang, Yuman
;
Gou, Yongsheng
;
Zhang, Minrui
;
Wang, Junfeng
;
Tian, Jinshou
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/01/28
Image intensifier
ICCD camera
MOSFET switching
Ultrafast imaging
Nanosecond pulse generation
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
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  |  
浏览/下载:45/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design
会议论文
Guilin, China, June 4-6, 2021
作者:
Cheng H(程贺)
;
Zhang C(张超)
;
Liu TF(刘铁锋)
;
Xie C(谢闯)
;
Yang ZJ(杨志家)
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2022/02/04
ballistic transport
compact model
integrated-cricuit design
sub-7 nm GAA MOSFET
the source-drain tunneling
The open-pin failure of power device under the combined effect of thermo-migration and electro-migration
期刊论文
Chinese Science Bulletin, 2020, 卷号: 65, 期号: 20, 页码: 2169-2177
作者:
Gao Liyin
;
Li Caifu
;
Cao Lihua
;
Liu Zhiquan
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2021/02/03
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling
期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:
Cheng H(程贺)
;
Liu TF(刘铁锋)
;
Zhang C(张超)
;
Liu ZF(刘志峰)
;
Yang ZJ(杨志家)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2020/07/11
ballistic transport
cylindrical gate-allaround (GAA) MOSFET
compact model
Wentzel-Kramers-Brillouin (WKB) approximation
the source-to-drain tunneling
Analytic Compact Model of Short-channel Cylindrical ballistic GAA MOSFET Including SDT effect
会议论文
Zhangjiajie, China, April 24-26, 2020
作者:
Cheng H(程贺)
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  |  
浏览/下载:10/0
  |  
提交时间:2020/08/01
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