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CORC

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Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: Vol.64 No.8, 页码: 3139-3144
作者:  Li, Y;  Guo, YX;  Zhang, K;  Zou, XM;  Wang, JL
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/31
Positive Shift in Threshold Voltage Induced by CuO and NiOₓ Gate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 页码: 1-6
作者:  Yi Li;  Yaxiong Guo;  Kai Zhang;  Xuming Zou;  Jingli Wang
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/31
Metal electrode influence on the wet selective etching of gaas/algaas 期刊论文
Journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 4
作者:  Wang Jie;  Han Qin;  Yang Xiao-Hong;  Wang Xiu-Ping;  Ni Hai-Qiao
收藏  |  浏览/下载：120/0  |  提交时间：2019/05/12
Metal electrode influence on the wet selective etching of GaAs/AlGaAs 期刊论文
journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 41208
Wang J; Han Q; Yang XH; Wang XP; Ni HQ; He JF
收藏  |  浏览/下载：12/0  |  提交时间：2012/02/06
Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots 期刊论文
physica e: low-dimensional systems and nanostructures, 2011, 卷号: 44, 期号: 3, 页码: 686-689
Li, Y.Q.; Wang, X.D.; Xu, X.N.; Liu, W.; Yang, F.H.; Zeng, Y.P.
收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14
Surface roughness scattering in two dimensional electron gas channel 期刊论文
Applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: 3
作者:  Liu, B.;  Lu, Y. W.;  Jin, G. R.;  Zhao, Y.;  Wang, X. L.
收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12
An Analytical Compact Direct-Current and Capacitance Model for AlGaN/GaN High Electron Mobility Transistors 会议论文
ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES, Symposium on Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates held at the 2008 Materials-Research-Society Meeting, San Francisco, CA, Web of Science
Li, Miao; Cheng, Xiaoxu; Wang, Yan
收藏  |  浏览/下载：4/0
Surface roughness scattering in two dimensional electron gas channel 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：48/5  |  提交时间：2011/07/05
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Liu J;  Zhu H
收藏  |  浏览/下载：73/2  |  提交时间：2010/03/08
HEMT  2DEG  
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:  Wei HY;  Jiao CM;  Song HP
收藏  |  浏览/下载：235/41  |  提交时间：2010/03/08

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