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Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 9, 页码: 7
作者:  Wang, Ying-Zhe;  Zheng, Xue-Feng;  Lv, Ling;  Cao, Yan-Rong;  Wang, Xiao-Hu
收藏  |  浏览/下载：25/0  |  提交时间：2021/12/08
The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes 期刊论文
APPLIED SURFACE SCIENCE, 2021, 卷号: 570, 页码: 151132
作者:  Wang, Xiao-Wei;   Liang, Feng;   Zhao, De-Gang;   Chen, Ping;   Liu, Zong-Shun;   Yang, Jing
收藏  |  浏览/下载：14/0  |  提交时间：2022/03/23
Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment 期刊论文
RESULTS IN PHYSICS, 2021, 卷号: 31, 页码: 105057
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Liu, Zongshun;   Chen, Ping;   Yang, Jing
收藏  |  浏览/下载：13/0  |  提交时间：2022/03/23
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 874, 页码: 159851
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Chen, Ping;   Yang, Jing;   Liu, Zongshun
收藏  |  浏览/下载：27/0  |  提交时间：2022/03/28
Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures 期刊论文
Journal of Materials Science, 2021, 卷号: 56, 期号: 2, 页码: 1481-1491
作者:  M. Tian;  C. Ma;  T. Lin;  J. Liu;  D. N. Talwar
收藏  |  浏览/下载：7/0  |  提交时间：2022/06/13
Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers 期刊论文
Journal of Applied Physics, 2021, 卷号: 130, 期号: 18
作者:  L. Cheng;  J. Zhang;  J. Wang;  J. Zhang;  J. Yang
收藏  |  浏览/下载：3/0  |  提交时间：2022/06/13
Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 822, 页码: 153571
作者:  J. Yang ;  D.G. Zhao;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang;   S.T. Liu;   Y. Xing
收藏  |  浏览/下载：22/0  |  提交时间：2021/06/17
Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1345-1350
作者:  Lei Wang ;   Ningyang Liu;   Bo Li ;   Huiping Zhu;   Xiaoting Shan;   Qingxi Yuan;   Xuewen Zhang;   Zheng Gong;   Fazhan Zhao ;   Naixin Liu;   Mengxin Liu;   Binhong Li;   Jiantou Gao;   Yang Huang ;   Jianqun Yang;   Xingji Li;   Jiajun Luo;   Zhengsheng Han, and Xinyu
收藏  |  浏览/下载：22/0  |  提交时间：2021/06/28
Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift* 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 3, 页码: 034206
作者:  Ping Chen ;   De-Gang Zhao ;   De-Sheng Jiang ;   Jing Yang ;   Jian-Jun Zhu ;   Zong-Shun Liu ;   Wei Liu ;   Feng Liang ;   Shuang-Tao Liu ;   Yao Xing ;   Li-Qun Zhang
收藏  |  浏览/下载：29/0  |  提交时间：2021/12/20
Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness 期刊论文
Nanoscale Research Letters, 2020, 卷号: 15, 期号: 1, 页码: 191
作者:  Xiaowei Wang;  Feng Liang;  Degang Zhao;  Zongshun Liu;  Jianjun Zhu ;  Jing Yang
收藏  |  浏览/下载：21/0  |  提交时间：2021/05/24

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