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浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions 其他 2016-01-01 Li, Yun; Jiang, Hai; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Hao, Hao; Du, Gang; Zhang, Xing; Liu, Xiaoyan 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 OXIDE  MODEL  BIAS  DEGRADATION  TECHNOLOGY  DEFECTS  STACKS  NOISE  PBTI  HFO2   Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions 期刊论文 International Conference on Solid State Devices and Materials (SSDM), 2016 Li, Yun; Jiang, Hai; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Hao, Hao; Du, Gang; Zhang, Xing; Liu, Xiaoyan 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 OXIDE  MODEL  BIAS  DEGRADATION  TECHNOLOGY  DEFECTS  STACKS  NOISE  PBTI  HFO2   Towards single-trap spectroscopy_Generation-recombination noise in UTBOX SOI nMOSFETs 期刊论文 Phys. Status Solidi C, 2015 作者:  Luo J(罗军);  Fang W(方雯);  Zhao C(赵超) 收藏  |  浏览/下载：7/0  |  提交时间：2016/05/31 Effect of surface fields on the dynamic resistance of planar hgcdte mid-wavelength infrared photodiodes 期刊论文 Journal of applied physics, 2015, 卷号: 117, 期号: 20, 页码: 8 作者:  He, Kai;  Zhou, Song-Min;  Li, Yang;  Wang, Xi;  Zhang, Peng 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/10 Research on signal processing of a precise photoelectric angle measuring system 会议论文 2012 ieee 5th international conference on advanced computational intelligence, icaci 2012, nanjing, china, october 18, 2012 - october 20, 2012 作者:  Qiang Ma 收藏  |  浏览/下载：11/0  |  提交时间：2013/07/17 Low frequency noise study on short wavelength hgcdte photodiodes 期刊论文 Acta physica sinica, 2005, 卷号: 54, 期号: 5, 页码: 2261-2266 作者:  Huang, YC;  Liu, DF;  Liang, JS;  Gong, HM 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/10 Hgcdte  Figure of merit  Low frequency noise  Deep level   Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers 期刊论文 Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 作者:  Leung, BH;  Chan, NH;  Fong, WK;  Zhu, CF;  Ng, SW 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Deep level transient fourier spectroscopy  (dltfs)  Gallium nitride (gan)  Intermediate-temperature buffer layer (itbf)  Low-frequency noise   Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文 ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：129/0  |  提交时间：2010/08/12 deep level transient Fourier spectroscopy  (DLTFS)  gallium nitride (GaN)  intermediate-temperature buffer layer (ITBF)  low-frequency noise  RESONANT-TUNNELING DIODES  GENERATION-RECOMBINATION NOISE  RANDOM-TELEGRAPH NOISE  ULTRAVIOLET PHOTODETECTORS  DEVICES