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化学研究所 [6]
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厦门大学 [4]
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Highly Textured Assembly of Engineered Si Nanowires for Artificial Synapses Model
期刊论文
ACS APPLIED ELECTRONIC MATERIALS, 2021, 卷号: 3, 期号: 3, 页码: 1375-1383
作者:
Duan, Chunyang
;
Zhao, Dong
;
Wang, Xiang
;
Ren, Bei
;
Li, Mengqi
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2021/08/31
Si nanowires
HiGee technology
assembly
graphene quantum dots
artificial synapses
Electric field effects on organic photovoltaic heterojunction interfaces: The model case of pentacene/C-60
期刊论文
COMPUTATIONAL AND THEORETICAL CHEMISTRY, 2020, 卷号: 1186
作者:
Bai, Rui-Rong
;
Zhang, Cai-Rong
;
Liu, Zi-Jiang
;
Chen, Xian-Kai
;
Wu, You-Zhi
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/03/01
Electric field
Electronic structure
Excitation
Heterojunction interface
Organic photovoltaic
Evolutions of morphology and electronic properties of few-layered MoS2 exposed to UVO
期刊论文
RESULTS IN PHYSICS, 2020, 卷号: 19, 页码: -
作者:
Liu, JX
;
Sun, KL
;
Zheng, XM
;
Wang, ST
;
Lian, SC
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  |  
浏览/下载:46/0
  |  
提交时间:2021/09/06
TRANSITION-METAL DICHALCOGENIDES
MONOLAYER MOS2
PHOTOLUMINESCENCE
TRANSISTORS
BULK
WSE2
A comparative study of S center dot center dot center dot pi chalcogen bonds between SF2 or SFH and C-C multiple bonds
期刊论文
JOURNAL OF MOLECULAR STRUCTURE, 2019, 卷号: 1188, 页码: 62-68
作者:
Su, He
;
Wu, Han
;
Wang, Hui
;
Wang, Hongyan
;
Ni, Yuxiang
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2020/07/01
Noncovalent chalcogen bond
First-principles
Molecular structure
Electronic properties
Energetic effects
Eighteen functional monolayer metal oxides: wide bandgap semiconductors with superior oxidation resistance and ultrahigh carrier mobility
期刊论文
NANOSCALE HORIZONS, 2019, 卷号: 4, 页码: 592-600
作者:
Guo, Yu
;
Ma, Liang
;
Mao, Keke
;
Ju, Minggang
;
Bai, Yizhen
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2019/12/02
Calculations
Carrier mobility
Electronic properties
Energy gap
Indium compounds
Metals
Oxidation resistance
Wide band gap semiconductors, Absorption co-efficient
Energetic stability
First-principles calculation
High carrier mobility
In-plane anisotropy
Low-dimensional materials
Optoelectronic applications
Two-dimensional materials, Monolayers
Structural stability and electronic properties of the (0001) inversion domain boundary in III-nitrides
期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2018, 卷号: 154, 页码: 152-158
作者:
Li, Siqian
;
Lei, Huaping
;
Anglade, Pierre-Matthieu
;
Chen, Jun
;
Ruterana, Pierre
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  |  
浏览/下载:47/0
  |  
提交时间:2019/12/20
Inversion domain boundary (IDB)
Group III-nitrides
DFT
Chemical bonding
Electronic structure
Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 43, 页码: 37651-37660
作者:
Li, Siqian
;
Lei, Huaping
;
Wang, Yi
;
Ullah, Md Barkat
;
Chen, Jun
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  |  
浏览/下载:81/0
  |  
提交时间:2019/01/11
ZnO/GaN heterointerface
(0001) plane IDBs
polarity control
energetic stability
2DHG
2DEG
Correlation of Molecular Structure and Charge Transport Properties: A Case Study in Naphthalenediimide-Based Copolymer Semiconductors
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 8
作者:
Hu, Yuanyuan
;
Li, Zhaojun
;
Jiang, Lang
;
Chen, Zhuojun
;
Liao, Lei
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2019/04/08
Charge Transport
Electron Cloud Overlaps
Energetic Disorder
Molecular Structures
Ofets
2D graphdiyne materials: challenges and opportunities in energy field
期刊论文
SCIENCE CHINA-CHEMISTRY, 2018, 卷号: 61, 期号: 7, 页码: 765-786
作者:
Xue, Yurui
;
Li, Yuliang
;
Zhang, Jin
;
Liu, Zhongfan
;
Zhao, Yuliang
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2019/04/08
Graphdiyne
Semiconductor
Two-dimensional Carbon Materials
Nanostructure
One-step growth of nanosheet-assembled BiOCl/BiOBr microspheres for highly efficient visible photocatalytic performance
期刊论文
APPLIED SURFACE SCIENCE, 2018, 卷号: 430, 期号: 无, 页码: 639-646
作者:
Zhang, Jinfeng
;
Lv, Jiali
;
Dai, Kai
;
Liang, Changhao
;
Liu, Qi
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  |  
浏览/下载:13/0
  |  
提交时间:2019/02/28
Chemical preparation
Composites
Catalysis
Photocatalytic activity
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