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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhanced photoeletrocatalytic reduction dechlorinations of PCP by Ru-Pd BQDs anchored Titania NAEs composites with double Schottky junctions: First-principles evidence and experimental verifications 期刊论文 APPLIED CATALYSIS B-ENVIRONMENTAL, 2018, 卷号: 227, 页码: 499-511 作者:  Fan, Shiying;  Li, Xinyong;  Tan, Jing;  Zeng, Libin;  Yin, Zhifan 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/02 Photoeletrocatalytic reductive dechlorinations  Polychlorinated compounds  Ru-Pd bimetallic quantum dots  Titania nanotube arrays  Double Schottky junctions   Aligned Carbon Nanotubes for High-Efficiency Schottky Solar Cells 期刊论文 SMALL, 2013, 卷号: 9, 期号: 8, 页码: 1367-1372 作者:  Li, QW*(李清文) 收藏  |  浏览/下载：34/0  |  提交时间：2014/01/03 carbon nanotubes  energy conversion  Schottky junctions  silicon  solar cells   Photovoltaic effects in ingan structures with p-n junctions 期刊论文 Physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 12, 页码: 4288-4291 作者:  Yang, Cuibai;  Wang, Xiaoliang;  Xiao, Hongling;  Ran, Junxue;  Wang, Cuimei 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 Photovoltaic effects in InGaN structures with p-n junctions 期刊论文 physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 12, 页码: 4288-4291 Yang, CB; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Hu, GX; Wang, XH; Zhang, XB; Li, MP; Li, JM 收藏  |  浏览/下载：58/3  |  提交时间：2010/03/08 FUNDAMENTAL-BAND GAP  IN1-XGAXN ALLOYS  INN   Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers 期刊论文 Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 作者:  Leung, BH;  Chan, NH;  Fong, WK;  Zhu, CF;  Ng, SW 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Deep level transient fourier spectroscopy  (dltfs)  Gallium nitride (gan)  Intermediate-temperature buffer layer (itbf)  Low-frequency noise   Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文 ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：129/0  |  提交时间：2010/08/12 deep level transient Fourier spectroscopy  (DLTFS)  gallium nitride (GaN)  intermediate-temperature buffer layer (ITBF)  low-frequency noise  RESONANT-TUNNELING DIODES  GENERATION-RECOMBINATION NOISE  RANDOM-TELEGRAPH NOISE  ULTRAVIOLET PHOTODETECTORS  DEVICES