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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 252-259 作者:  Xiao, D. Q.;  He, G.;  Liu, M.;  Gao, J.;  Jin, P. 收藏  |  浏览/下载：35/0  |  提交时间：2017/10/18 High-k Gate Dielectrics  Optical Constant  Electrical Properties  Ti incorporaTion  Sol-gel  Conduction Mechanisms   Contributions to yield strength in an ultrafine grained 1050 aluminum alloy after DC current annealing 期刊论文 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2016, 卷号: 674, 页码: 193-202 Cao, YH; He, LZ; Zhou, YZ; Wang, P; Cui, JZ 收藏  |  浏览/下载：43/0  |  提交时间：2016/12/28 Direct electric current annealing  Ultrafine grained 1050 aluminum alloy  Yield strength  Dislocations  High angle boundaries   Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082 作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng 收藏  |  浏览/下载：22/0  |  提交时间：2017/11/21 High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism   Synthesis of copper nanowires under a direct current electric field 期刊论文 2010, 2010, OCT Zhang, JH; Sun, JL; Liu, W; Shi, S; Sun, HS; Guo, JH 收藏  |  浏览/下载：2/0  |  提交时间：2017/06/15 ANNEALING PROCESS  TEMPLATE  NANORODS  NANOCRYSTALS  GROWTH  ARRAYS  RODS  Engineering, Multidisciplinary  Nanoscience & Nanotechnology  Materials Science, Multidisciplinary  Physics, Applied