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Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs
其他
2017-01-01
Di, Shaoyan
;
Shen, Lei
;
Lun, Zhiyuan
;
Chang, Pengying
;
Zhao, Kai
;
Lu, Tiao
;
Du, Gang
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Boltzmann transport equation
GaSb
surface orientation
double gate
MOBILITY
MOSFETS
Evaluation of Ballistic Transport in III-V-Based p-Channel MOSFETs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017
Chang, Pengying
;
Liu, Xiaoyan
;
Di, Shaoyan
;
Du, Gang
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
III-V semiconductors
ballistic transport
eight-band k . p
GaSb
InSb
orientation
pMOSFETs
strain effect
SURFACE ORIENTATION
HOLE MOBILITY
MODEL
Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer
期刊论文
Ieee transactions on nuclear science, 2016, 卷号: 63, 期号: 5, 页码: 2731-2737
作者:
Dai, Lihua
;
Bi, Dawei
;
Ning, Bingxu
;
Hu, Zhiyuan
;
Song, Lei
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2019/05/09
Buried oxide
Interface trap
Silicon ion implantation
Soi nmosfets
Total dose radiation
Investigation of Scattering Mechanism in Nano-Scale Double Gate In0.53Ga0.47As nMOSFETs by a Deterministic BTE Solver
其他
2016-01-01
Di, Shaoyan
;
Lun, Zhiyuan
;
Chang, Pengying
;
Shen, Lei
;
Zhao, Kai
;
Lu, Tiao
;
Du, Gang
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Boltzmann transport equation (BTE)
InGaAs
double gate
scattering
MOSFETS
SEMICONDUCTORS
TRANSPORT
AN EXPERIMENTAL AND ANALYTICAL METHOD TO OBSERVE THE POLYSILICON NANOWIRE MOSFET THRESHOLD VOLTAGE
其他
2016-01-01
Sheu, Gene
;
Yang, Shao-Ming
;
Aanand
;
Imam, Syed Sarwar
;
Jen, Fan Ming
;
Lu, Shao Wei
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
nanowire
undoped-polysilicon
native gate oxide
drain saturation current
back-gate
mean-free path
TRANSISTORS
TRANSPORT
Investigation of Hole Mobility in Strained InSb Ultrathin Body pMOSFETs
期刊论文
ieee电子器件汇刊, 2015
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Wei, Kangliang
;
Du, Gang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
Hole mobility
InSb
modeling
MOSFETs
scattering
self-consistent
six-band k . p
ultrathin body (UTB)
V COMPOUND SEMICONDUCTORS
INVERSION-LAYER MOBILITY
DEFORMATION POTENTIALS
SURFACE ORIENTATION
QUANTUM-WELLS
ON-INSULATOR
BAND
THICKNESS
PHYSICS
A device adaptive inflow boundary condition for Wigner equations of quantum transport
其他
2014-01-01
Jiang, Haiyan
;
Lu, Tiao
;
Cai, Wei
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/11
Frensley inflow boundary condition
Wigner function
Resonant tunneling diode
DOUBLE-GATE MOSFETS
MONTE-CARLO APPROACH
GREENS-FUNCTION
SIMULATION
MODEL
MASS
A closed-form capacitance model for tunnel FETs with explicit surface potential solutions
期刊论文
应用物理杂志, 2014
Wang, Jiaxin
;
Wu, Chunlei
;
Huang, Qianqian
;
Wang, Chao
;
Huang, Ru
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/10
FIELD-EFFECT TRANSISTORS
PARASITIC CAPACITANCES
FRINGE CAPACITANCE
GATE DIELECTRICS
MOS-TRANSISTOR
CMOS DEVICE
MOSFETS
SOI
PERFORMANCE
IMPACT
Physically Based Evaluation of Electron Mobility in Ultrathin-Body Double-Gate Junctionless Transistors
期刊论文
ieee electron device letters, 2014
Wei, Kangliang
;
Zeng, Lang
;
Wang, Juncheng
;
Du, Gang
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
Ionized impurity scattering
junctionless (JL)
mobility
screening
surface roughness
ultrathin
CHARGE-TRANSPORT
MOSFETS
FIELD
Derivative Superposition Numerical Method for Double-Gate MOSFET Transistor Application to RF Mixer
期刊论文
journal of computational and theoretical nanoscience, 2014
Zhu, Haifeng
;
Huang, Shuai
;
Shi, Min
;
Zhang, Wei
;
Sun, Ling
;
He, Lin
;
Zhu, Xiaoan
;
Wang, Cheng
;
He, Xiaomeng
;
Liang, Hailang
;
He, Qingxing
;
Du, Caixia
;
He, Jin
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/16
Double-Gate (DG) MOSFET
Linearity
IIP3
Device Simulation
Intermodulation Distortion
Mixer
DG-MOSFETS
LINEARITY
INVERSION
PERFORMANCE
DEVICES
MODEL
CMOS
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