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浏览/检索结果: 共7条，第1-7条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Cluster-assisted nucleation mechanism of titanium oxides in Fe-Ti supercooled alloys 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 744, 页码: 797-800 作者:  Zhao, Dan[1];  Bao, Wenqiang[2];  Li, Huigai[3];  Zheng, Shaobo[4];  Chou, Kuo-Chih[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 Cluster-assisted nucleation  Microstructure  Atom probe  Titanium oxide  Rapid solidification   Cluster-assisted nucleation of silicon phase in hypoeutectic Al-Si alloy with further inoculation 期刊论文 Acta materialia, 2014, 页码: 162-173 作者:  Yong Zhang;  Hongliang Zheng;  Yue Liu 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Al-Si alloys  Eutectic  Cluster-assisted nucleation  Solidification  Grain refinement   Cluster-assisted nucleation of silicon phase in hypoeutectic Al-Si alloy with further inoculation 期刊论文 ACTA MATERIALIA, 2014, 卷号: 70, 页码: 162-173 作者:  Zhang, Yong;  Zheng, Hongliang;  Liu, Yue;  Shi, Lei;  Xu, Rongfu 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 Al-Si alloys  Eutectic  Cluster-assisted nucleation  Solidification  Grain refinement   The formation of stacking fault tetrahedra in Al and Cu II SFT growth by successive absorption of vacancies generated by dipole annihilation 期刊论文 Acta Materialia, 2011, 卷号: 59, 期号: 1, 页码: 41200 H. Wang; D. S. Xu; R. Yang; P. Veyssiere 收藏  |  浏览/下载：16/0  |  提交时间：2012/04/13 Stacking fault tetrahedron  Dislocation dipole  Dislocation  annihilation  Molecular dynamics simulations  Vacancy cluster  edge-dislocation dipoles  fcc metals  tensile properties  single-crystals  quenched gold  temperature-dependence  point-defects  atomic-scale  part i  copper   Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716 作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG 收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05 HIGH-PRESSURE SYNTHESIS  VAPOR-DEPOSITION  NUCLEATION  EMISSION  DIAMOND  GROWTH   Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文 diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376 Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：27/0  |  提交时间：2010/12/28 Cubic boron nitride  Doping  Ion beam assisted deposition  X-ray photoelectron spectroscopy  RAY PHOTOELECTRON-SPECTROSCOPY  VAPOR-DEPOSITION  SI  NUCLEATION  GROWTH   Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure 期刊论文 journal of crystal growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465 作者:  Yin ZG 收藏  |  浏览/下载：304/5  |  提交时间：2010/04/11 crystal structure  magnetron sputtering  semiconducting III-V materials  MOLECULAR-BEAM EPITAXY  CHEMICAL-VAPOR-DEPOSITION  INAS1-XSBX  ALLOYS  INASSB  INSB