×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
兰州理工大学 [13]
金属研究所 [12]
物理研究所 [4]
力学研究所 [2]
北京大学 [2]
西安交通大学 [2]
更多...
内容类型
期刊论文 [41]
会议论文 [2]
发表日期
2023 [1]
2021 [4]
2020 [6]
2019 [7]
2018 [5]
2017 [10]
更多...
学科主题
Materials ... [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共43条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS
2
: Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding
期刊论文
SMALL, 2023, 页码: 11
作者:
Li, Shouheng
;
Lin JG(林金国)
;
Chen, Yun
;
Luo, Zheng
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2023/10/23
2D materials
AC-transmission electron microscopy (TEM)
growth anisotropy
line defects
morphology
MoS2
Chemical short-range order in Fe50Mn30Co10Cr10 high-entropy alloy
期刊论文
MATERIALS TODAY NANO, 2021, 卷号: 16, 页码: 11
作者:
Liu, D.
;
Wang, Q.
;
Wang, J.
;
Chen, X. F.
;
Jiang, P.
收藏
  |  
浏览/下载:104/0
  |  
提交时间:2021/11/15
Chemical short-range order
High-entropy alloy
Spatially correlated distribution
Fe50Mn30Co10Cr10
Atomic-resolution study on the interface structure and strain state reversion of the Bi2Sr2CuO6+delta/MgO heterostructure
期刊论文
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2021, 卷号: 592, 页码: 291-295
作者:
Zhang, Jian
;
Wang, Weizhen
;
Wang, Nan
;
Wang, Mingguang
;
Qi, Yang
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2021/10/15
High-T-c superconductors
Thin films
Interface structure
Microstructure
Domain matching epitaxy
Thermal expansion mismatch
Residual strain
Topological polar structures in ferroelectric oxide films
期刊论文
JOURNAL OF APPLIED PHYSICS, 2021, 卷号: 129, 期号: 20
作者:
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2021/10/14
Ferroelectric films
High resolution transmission electron microscopy
Magnetic materials
Nanotechnology
Strain
Textures
Topology
Aberration-corrected
Continuous rotation
Depolarization fields
Dzyaloshinskii-Moriya interaction
External strains
Ferroelectric oxides
Relaxation mechanism
Skyrmion lattices
Coexisting morphotropic phase boundary and giant strain gradient in BiFeO3films
期刊论文
Journal of Applied Physics, 2021, 卷号: 129, 期号: 18
作者:
Tang, Y.L.
;
Zhu, Y.L.
;
Zou, M.J.
;
Wang, Y.J.
;
Ma, X.L.
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2022/02/17
Bismuth compounds
Electric fields
High resolution transmission electron microscopy
Iron metallography
Oxide films
Perovskite
Polarization
Scanning electron microscopy
Strain
Aberration-corrected scanning transmission electron microscopies
Built-in electric fields
Large compressive strains
Morphotropic phase boundaries
Piezoelectric response
Polarization direction
Spontaneous polarizations
Tetragonal and rhombohedral phasis
Boundary conditions control of topological polar nanodomains in epitaxial BiFeO3(110) multilayered films
期刊论文
Journal of Applied Physics, 2020, 卷号: 128, 期号: 18
作者:
Geng, W.R.
;
Tang, Y.L.
;
Zhu, Y.L.
;
Wang, Y.J.
;
Ma, X.L.
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2020/12/18
Bismuth compounds
Boundary conditions
Domain walls
Ferroelectric films
Ferroelectricity
Gadolinium compounds
High resolution transmission electron microscopy
Nanotechnology
Terbium compounds
Topology
Vortex flowAberration-corrected
Different boundary condition
High density memory
Mechanical boundaries
Multi-layered films
Orthorhombic structures
Topological structure
Transmission electron microscopy observation
Oxygen octahedral coupling mediated ferroelectric-antiferroelectric phase transition based on domain wall engineering
会议论文
作者:
Geng, W.R.
;
Guo, X.W.
;
Zhu, Y.L.
;
Wang, Y.J.
;
Tang, Y.L.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2020/12/18
Antiferroelectric materials
Antiferroelectricity
Bismuth compounds
Calculations
Energy storage
Ferroelectric films
Ferroelectricity
High resolution transmission electron microscopy
Iron compounds
Oxygen
Ultrathin filmsAberration-corrected
Antiferroelectric phase transition
Antiparallel cation displacements
Energy storage and conversions
Ferroelectric domains
First-principles calculation
Structural transformation
Transmission electron microscopy observation
Oxygen octahedral coupling mediated ferroelectric-antiferroelectric phase transition based on domain wall engineering
期刊论文
Acta Materialia, 2020, 卷号: 198, 页码: 145-152
作者:
Geng, W.R.
;
Guo, X.W.
;
Zhu, Y.L.
;
Wang, Y.J.
;
Tang, Y.L.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2020/11/14
Antiferroelectric materials
Antiferroelectricity
Bismuth compounds
Calculations
Energy storage
Ferroelectric films
Ferroelectricity
High resolution transmission electron microscopy
Iron compounds
Oxygen
Ultrathin films
Aberration-corrected
Antiferroelectric phase transition
Antiparallel cation displacements
Energy storage and conversions
Ferroelectric domains
First-principles calculation
Structural transformation
Transmission electron microscopy observation
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
会议论文
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2020/12/18
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
TransmissionsAberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
期刊论文
Acta Materialia, 2020, 卷号: 186, 页码: 68-76
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2020/11/14
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
Transmissions
Aberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
©版权所有 ©2017 CSpace - Powered by
CSpace