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浏览/检索结果: 共1条，第1-1条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文 Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 A set of ZnO/MgZnO heterostructures with well widths  Lw  varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton  while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness  the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.