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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE 期刊论文 journal of crystal growth, 2000, 卷号: 218, 期号: 1, 页码: 1-6 Xu HZ; Wang ZG; Kawabe M; Harrison I; Ansell BJ; Foxon CT 收藏  |  浏览/下载：61/0  |  提交时间：2010/08/12 GaN  photoluminescence  optical quenching of photoconductivity  native defect level  molecular beam epitaxy  SINGLE-CRYSTAL GAN  I-N PHOTODIODES  HIGH-SPEED  PHOTOCONDUCTORS  ALXGA1-XN  SIMULATIONS  DETECTORS  SAPPHIRE  LAYERS   Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m) 期刊论文 ieee journal of selected topics in quantum electronics, 2000, 卷号: 6, 期号: 4, 页码: 577-584 Yang GW; Hwu RJ; Xu ZT; Ma XY 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 quantum-well lasers  semiconductor diodes  semiconductor epitaxial layers  semiconductor lasers  semiconductor materials  OPERATION  SINGLE   The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z 收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12 GaN  MOVPE growth  Al2O3 coated Si substrate  crystal structure  photoluminescence spectrum  SINGLE CRYSTALLINE GAN  HIGH-QUALITY GAN  INTERMEDIATE LAYER  BUFFER LAYERS  SI  FILMS  ALN  DEPOSITION  SAPPHIRE  MOLECULAR-BEAM EPITAXY   Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures 期刊论文 science in china series a-mathematics physics astronomy, 1997, 卷号: 40, 期号: 2, 页码: 214-218 Chen NF; He HJ; Wang YT; Lin LY 收藏  |  浏览/下载：22/0  |  提交时间：2010/11/17 low temperature  molecular beam epitaxy  GaAs single crystal  lattice parameter  arsenic interstitial couples  arsenic precipitates  effects of backgating or sidegating  LAYERS  DEPENDENCE   Effects of point defects on lattice parameters of semiconductors 期刊论文 physical review b, 1996, 卷号: 54, 期号: 12, 页码: 8516-8521 Chen NF; Wang YT; He HJ; Lin LY 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/17 MOLECULAR-BEAM EPITAXY  GAAS SINGLE-CRYSTALS  LOW-TEMPERATURE GAAS  DOPED GAAS  LAYERS  CARBON  DIFFRACTOMETER  GROWTH  SI